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SKM75GB128D_06

Description
100 A, 1200 V, N-CHANNEL IGBT
Categorysemiconductor    Discrete semiconductor   
File Size810KB,6 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Download Datasheet Parametric View All

SKM75GB128D_06 Overview

100 A, 1200 V, N-CHANNEL IGBT

SKM75GB128D_06 Parametric

Parameter NameAttribute value
Number of terminals7
Rated off time375 ns
Maximum collector current100 A
Maximum Collector-Emitter Voltage1200 V
Processing package descriptionCASE D 61, SEMITRANS 2, 7 PIN
Lead-freeYes
EU RoHS regulationsYes
stateDISCONTINUED
packaging shapeRectangle
Package SizeFlange mounting
Terminal formUNSPECIFIED
terminal coatingtin/silver
Terminal locationUPPER
Packaging MaterialsUNSPECIFIED
structureSERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODES
Shell connectionisolation
Number of components2
transistor applicationsPOWER control
Transistor component materialssilicon
Channel typeN channel
Transistor typeINSULATED GATE BIPOLAR
Rated on time195 ns
SKM 75GB128D
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Units
SEMITRANS
®
2
SPT IGBT Module
SKM 75GB128D
Inverse Diode
Module
Features
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Units
Typical Applications
GB
1
11-09-2006 SEN
© by SEMIKRON
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