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BAV102

Description
RECTIFIER DIODE,150V V(RRM),DO-213AA
CategoryDiscrete semiconductor    diode   
File Size82KB,2 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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BAV102 Overview

RECTIFIER DIODE,150V V(RRM),DO-213AA

BAV102 Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instructionO-LELF-R2
Reach Compliance Codecompli
ECCN codeEAR99
Is SamacsysN
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-LELF-R2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Maximum output current0.2 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage250 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal surfaceMATTE TIN
Terminal formWRAP AROUND
Terminal locationEND
Base Number Matches1
BAV100/101/102/103
500mW Hermetically Sealed Glass
High Voltage Switching Diodes
Pb
RoHS
COMPLIANCE
MINI MELF
Features
High Voltage Switching Device
Mini Melf package
Surface device type mounting
Hermetically sealed glass
Compression bonded construction
All external surface are corrosion resistant
and leads are readily solderable
RoHS compliant
Matte Tin (Sn) lead finish
Color band indicates Negative Polarity
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
Cambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Ratings
Type Number
Repetitive Peak Reverse Voltage
Symbol
V
RRM
Value
250
Units
V
mA
A
mW
O
C
Units
V
V
nA
Average Rectified Forward Current
I
F(AV)
200
Non- Repetitive Peak Forward Surge Current
1.0
Pulse Width =1.0 Second
I
FSM
4.0
Pulse Width = 1.0 usecond
Power Dissipation
Pd
500
Operating and Storage Temperature Range
T
J
, T
STG
-65 to + 200
Electrical Characteristics
Type Number
Symbol
Min
Max
60
Breakdown Voltage
BAV100 IR=100uA
120
BAV101 IR=100uA
B
V
200
BAV102 IR=100uA
250
BAV103 IR=100uA
Forward Voltage
IF= 100mA
V
F
1.0
Peak Reverse Current BAV100 VR=50V
100
IR
BAV101 VR=100V
100
-
BAV102 VR=150V
100
BAV103 VR=200V
100
R
ӨJA
Thermal Resistance, Junction to Ambient
350
-
Junction Capacitance VR=0, f=1.0MHz
Cj
5.0
-
Reverse Recovery Time (Note)
trr
50
Notes: Reverse Recovery Test Conditions: IF=IR=30mA, Irr=3mA, R
L
=100Ω.
o
C/W
pF
nS
Version: A07

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