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TSM12N02_07

Description
20V N-Channel MOSFET
File Size282KB,6 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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TSM12N02_07 Overview

20V N-Channel MOSFET

TSM12N02
20V N-Channel MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(mΩ)
20
30 @ V
GS
= 10V
40 @ V
GS
= 4.5V
TO-252
Pin Definition:
1. Gate
2. Drain
3. Source
I
D
(A)
8
6
Features
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
Load Switch
PA Switch
Ordering Information
Part No.
TSM12N02CP RO
Package
TO-252
Packing
T&R
N-Channel MOSFET
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@4.5V.
Pulsed Drain Current, V
GS
@4.5V
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
a,b
o
o
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
T
J
, T
STG
Ta = 25 C
Ta = 70 C
Limit
20
±12
12
30
1.7
Unit
V
V
A
A
A
W
o
o
60
23
+150
-55 to +150
C
C
Thermal Performance
Parameter
Lead Temperature (1/8” from case)
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Maximum DC current limited by the package
b. Surface Mounted on 1” x 1” FR4 Board, t
10 sec.
Symbol
T
L
JC
JA
Limit
10
2.2
50
Unit
S
o
o
C/W
C/W
1/6
Version: A07

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