SKM 50GB123D ...
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Units
SEMITRANS
®
2
IGBT Modules
SKM 50GB123D
SKM 50GAL123D
Inverse Diode
Freewheeling Diode
Features
Module
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Units
Typical Applications
GB
GAL
1
23-11-2006 RAA
© by SEMIKRON
SKM 50GB123D ...
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max.
Units
SEMITRANS
®
2
IGBT Modules
SKM 50GB123D
SKM 50GAL123D
Freewheeling Diode
Features
Module
Typical Applications
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
GAL
2
23-11-2006 RAA
© by SEMIKRON
SKM 50GB123D ...
Fig. 1 Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2 Rated current vs. temperature I
C
= f (T
C
)
Fig. 3 Typ. turn-on /-off energy = f (I
C
)
Fig. 4 Typ. turn-on /-off energy = f (R
G
)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
3
23-11-2006 RAA
© by SEMIKRON
SKM 50GB123D ...
Fig. 7 Typ. switching times vs. I
C
Fig. 8 Typ. switching times vs. gate resistor R
G
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovered charge
4
23-11-2006 RAA
© by SEMIKRON
SKM 50GB123D ...
UL recognized
File no. E 63 532
5
23-11-2006 RAA
© by SEMIKRON