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SKM50GB123D

Description
IGBT Modules
CategoryDiscrete semiconductor    The transistor   
File Size761KB,5 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Download Datasheet Parametric Compare View All

SKM50GB123D Overview

IGBT Modules

SKM50GB123D Parametric

Parameter NameAttribute value
MakerSEMIKRON
Parts packaging codeDO-204
package instructionCASE D61, SEMITRANS 2, 7 PIN
Contacts2
Manufacturer packaging codeCASE D61
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresUL RECOGNIZED
Shell connectionISOLATED
Maximum collector current (IC)50 A
Collector-emitter maximum voltage1200 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X7
Number of components2
Number of terminals7
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)310 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)445 ns
Nominal on time (ton)130 ns
VCEsat-Max2.7 V
SKM 50GB123D ...
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Units
SEMITRANS
®
2
IGBT Modules
SKM 50GB123D
SKM 50GAL123D
Inverse Diode
Freewheeling Diode
Features
Module
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Units
Typical Applications
GB
GAL
1
23-11-2006 RAA
© by SEMIKRON

SKM50GB123D Related Products

SKM50GB123D SKM50GAL123D SKM50GB123D_06
Description IGBT Modules IGBT Modules IGBT Modules
Maker SEMIKRON SEMIKRON -
Parts packaging code DO-204 DO-204 -
package instruction CASE D61, SEMITRANS 2, 7 PIN FLANGE MOUNT, R-XUFM-X5 -
Contacts 2 2 -
Manufacturer packaging code CASE D61 CASE D61 -
Reach Compliance Code unknow unknow -
Other features UL RECOGNIZED UL RECOGNIZED -
Shell connection ISOLATED ISOLATED -
Maximum collector current (IC) 50 A 50 A -
Collector-emitter maximum voltage 1200 V 1200 V -
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE -
Gate-emitter maximum voltage 20 V 20 V -
JESD-30 code R-XUFM-X7 R-XUFM-X5 -
Number of components 2 1 -
Number of terminals 7 5 -
Maximum operating temperature 150 °C 150 °C -
Package body material UNSPECIFIED UNSPECIFIED -
Package shape RECTANGULAR RECTANGULAR -
Package form FLANGE MOUNT FLANGE MOUNT -
Polarity/channel type N-CHANNEL N-CHANNEL -
Maximum power dissipation(Abs) 310 W 310 W -
Certification status Not Qualified Not Qualified -
surface mount NO NO -
Terminal form UNSPECIFIED UNSPECIFIED -
Terminal location UPPER UPPER -
transistor applications POWER CONTROL POWER CONTROL -
Transistor component materials SILICON SILICON -
Nominal off time (toff) 445 ns 445 ns -
Nominal on time (ton) 130 ns 130 ns -
VCEsat-Max 2.7 V 2.7 V -

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