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74AUP1G07GF

Description
Low-power buffer with open-drain output
File Size69KB,16 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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74AUP1G07GF Overview

Low-power buffer with open-drain output

74AUP1G07
Low-power buffer with open-drain output
Rev. 02 — 14 June 2007
Product data sheet
1. General description
The 74AUP1G07 is a high-performance, low-power, low-voltage, Si-gate CMOS device,
superior to most advanced CMOS compatible TTL families.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire V
CC
range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire
V
CC
range from 0.8 V to 3.6 V.
This device is fully specified for partial Power-down applications using I
OFF
.
The I
OFF
circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
The 74AUP1G07 provides the single non-inverting buffer with open-drain output. The
output of the device is an open drain and can be connected to other open-drain outputs to
implement active-LOW wired-OR or active-HIGH wired-AND functions.
2. Features
s
Wide supply voltage range from 0.8 V to 3.6 V
s
High noise immunity
s
Complies with JEDEC standards:
x
JESD8-12 (0.8 V to 1.3 V)
x
JESD8-11 (0.9 V to 1.65 V)
x
JESD8-7 (1.2 V to 1.95 V)
x
JESD8-5 (1.8 V to 2.7 V)
x
JESD8-B (2.7 V to 3.6 V)
s
ESD protection:
x
HBM JESD22-A114E Class 3A exceeds 5000 V
x
MM JESD22-A115-A exceeds 200 V
x
CDM JESD22-C101C exceeds 1000 V
s
Low static power consumption; I
CC
= 0.9
µA
(maximum)
s
Latch-up performance exceeds 100 mA per JESD 78 Class II
s
Inputs accept voltages up to 3.6 V
s
Low noise overshoot and undershoot < 10 % of V
CC
s
I
OFF
circuitry provides partial Power-down mode operation
s
Multiple package options
s
Specified from
−40 °C
to +85
°C
and
−40 °C
to +125
°C

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