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SEMIX452GB126HD

Description
Trench IGBT Modules
CategoryDiscrete semiconductor    The transistor   
File Size815KB,5 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Environmental Compliance
Download Datasheet Parametric View All

SEMIX452GB126HD Overview

Trench IGBT Modules

SEMIX452GB126HD Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionFLANGE MOUNT, R-XUFM-X11
Contacts11
Manufacturer packaging codeCASE SEMIX 2
Reach Compliance Codecompli
Shell connectionISOLATED
Maximum collector current (IC)470 A
Collector-emitter maximum voltage1200 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 codeR-XUFM-X11
JESD-609 codee2
Number of components2
Number of terminals11
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
GuidelineIEC-60747-1
surface mountNO
Terminal surfaceTin/Silver (Sn/Ag)
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)700 ns
Nominal on time (ton)370 ns
Base Number Matches1
SEMiX 452GB126HD
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Units
SEMiX
®
2
Trench IGBT Modules
SEMiX 452GB126HD
Module
Preliminary Data
Inverse Diode
Features
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Units
Typical Applications
Remarks
GB
1
19-04-2007 SCH
© by SEMIKRON

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