EEWORLDEEWORLDEEWORLD

Part Number

Search

SEMIX303GD12T4C

Description
Trench IGBT Modules
CategoryDiscrete semiconductor    The transistor   
File Size724KB,5 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Download Datasheet Parametric View All

SEMIX303GD12T4C Overview

Trench IGBT Modules

SEMIX303GD12T4C Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-XUFM-X29
Contacts29
Manufacturer packaging codeCASE SEMIX 33S
Reach Compliance Codecompli
Shell connectionISOLATED
Maximum collector current (IC)465 A
Collector-emitter maximum voltage1200 V
ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 codeR-XUFM-X29
Number of components6
Number of terminals29
Maximum operating temperature175 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Base Number Matches1
SEMiX 303GD12T4c
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Units
SEMiX
®
33c
Trench IGBT Modules
SEMiX 303GD12T4c
Inverse Diode
Module
Target Data
Features
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Units
Typical Applications
Remarks
GD
1
16-07-2007 SCH
© by SEMIKRON

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 10  295  1180  297  707  1  6  24  15  55 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号