Silizium-PIN-Fotodiode
Silicon PIN Photodiode
BP 104 S
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
von 400 nm bis 1100 nm
• Kurze Schaltzeit (typ. 20 ns)
• Geeignet für Vapor-Phase Löten und
IR-Reflow-Löten
• SMT-fähig
Anwendungen
• Lichtschranken für Gleich- und
Wechsellichtbetrieb
• IR-Fernsteuerungen
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type
BP 104 S
Bestellnummer
Ordering Code
Q62702-P1605
Features
• Especially suitable for applications from
400 nm to 1100 nm
• Short switching time (typ. 20 ns)
• Suitable for vapor-phase and IR-reflow
soldering
• Suitable for SMT
Applications
•
•
•
•
Photointerrupters
IR remote controls
Industrial electronics
For control and drive circuits
2001-02-21
1
BP 104 S
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Betriebs- und Lagertemperatur
Operating and storage temperature range
Sperrspannung
Reverse voltage
Verlustleistung,
T
A
= 25
°C
Total power dissipation
Symbol
Symbol
Wert
Value
– 40 … + 85
20
150
Einheit
Unit
°C
V
mW
T
op
;
T
stg
V
R
P
tot
Kennwerte
(
T
A
= 25
°C,
Normlicht A,
T
= 2856 K)
Characteristics
(
T
A
= 25
°C,
standard light A,
T
= 2856 K)
Bezeichnung
Parameter
Fotostrom
V
R
= 5 V
Photocurrent
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit
S
= 10% von
S
max
Spectral range of sensitivity
S
= 10% of
S
max
Bestrahlungsempfindliche Fläche
Radiant sensitive area
Abmessung der bestrahlungsempfindlichen
Fläche
Dimensions of radiant sensitive area
Abstand Chipoberfläche zu Gehäuseoberfläche
Distance chip front to case surface
Halbwinkel
Half angle
Dunkelstrom,
V
R
= 10 V
Dark current
Spektrale Fotoempfindlichkeit,
λ
= 850 nm
Spectral sensitivity
Quantenausbeute,
λ
= 850 nm
Quantum yield
Symbol
Symbol
Wert
Value
55 (≥ 40)
850
400 … 1100
Einheit
Unit
nA/lx
nm
nm
I
P
λ
S max
λ
A
L
×
B
L
×
W
H
ϕ
4.84
2.20
×
2.20
mm
2
mm
×
mm
0.3
±
60
2 (≤ 30)
0.62
0.90
mm
Grad
deg.
nA
A/W
Electrons
Photon
I
R
S
λ
η
2001-02-21
2
BP 104 S
Kennwerte
(
T
A
= 25
°C,
Normlicht A,
T
= 2856 K)
Characteristics
(
T
A
= 25
°C,
standard light A,
T
= 2856 K) (cont’d)
Bezeichnung
Parameter
Leerlaufspannung,
E
V
= 1000 lx
Open-circuit voltage
Kurzschlußstrom,
E
V
= 1000 lx
Short-circuit current
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
R
L
= 50
Ω;
V
R
= 5 V;
λ
= 850 nm;
I
p
= 800
µA
Durchlaßspannung,
I
F
= 100 mA,
E
= 0
Forward voltage
Kapazität,
V
R
= 0 V,
f
= 1 MHz,
E
= 0
Capacitance
Temperaturkoeffizient von
V
O
Temperature coefficient of
V
O
Temperaturkoeffizient von
I
SC
Temperature coefficient of
I
SC
Rauschäquivalente Strahlungsleistung
Noise equivalent power
V
R
= 10 V,
λ
= 850 nm
Nachweisgrenze,
V
R
= 10 V,
λ
= 850 nm
Detection limit
Symbol
Symbol
Wert
Value
360 (≥ 280)
50
20
Einheit
Unit
mV
µA
ns
V
O
I
SC
t
r
,
t
f
V
F
C
0
TK
V
TK
I
NEP
1.3
48
– 2.6
0.18
3.6
×
10
– 14
V
pF
mV/K
%/K
W
-----------
-
Hz
cm
×
Hz
-------------------------
-
W
D*
6.1
×
10
12
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BP 104 S
Relative Spectral Sensitivity
S
rel
=
f
(λ)
100
S
rel
%
80
OHF00078
Photocurrent
I
P
=
f
(
E
v
),
V
R
= 5 V
Open-Circuit Voltage
V
O
=
f
(E
v
)
Ι
P
10
3
µ
A
OHF02283
Total Power Dissipation
P
tot
=
f
(
T
A
)
160
mW
P
tot
140
120
100
OHF00958
10
4
mV
V
O
10
3
10
2
V
O
60
10
1
40
Ι
P
10
2
80
60
10
0
20
10
1
40
20
0
400 500 600 700 800 900 nm 1100
λ
10
-1
10
0
10
0
10
1
10
2
10
3
lx 10
4
E
V
0
0
20
40
60
80 ˚C 100
T
A
Dark Current
I
R
=
f
(
V
R
),
E
= 0
10
2
nA
OHF02284
Capacitance
C
=
f
(
V
R
),
f
= 1 MHz,
E
= 0
60
C
pF
50
OHF01778
Dark Current
I
R
=
f
(
T
A
),
V
R
= 10 V,
E
= 0
10
3
OHF00082
Ι
R
Ι
R
nA
10
2
10
1
40
30
10
1
10
0
20
10
0
10
10
-1
0
2
4
6
8 10 12 14 16 V 20
V
R
0
-2
10
10
-1
10
0
10
1
V 10
2
V
R
10
-1
0
20
40
60
80 ˚C 100
T
A
Birectional Characteristics
S
rel
=
f
(ϕ)
40
30
20
10
ϕ
0
1.0
OHF01402
50
0.8
60
0.6
70
0.4
80
0.2
0
90
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
2001-02-21
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BP 104 S
Maßzeichnung
Package Outlines
1.2 (0.047)
1.1 (0.043)
0...0.1
(0...0.004)
0.3 (0.012)
Chip position
1.1 (0.043)
0.9 (0.035)
6.7 (0.264)
6.2 (0.244)
4.5 (0.177)
4.3 (0.169)
0.9 (0.035)
0.7 (0.028)
1.6 (0.063)
±0.2 (0.008)
1.7 (0.067)
1.5 (0.059)
4.0 (0.157)
3.7 (0.146)
GEOY6861
Photosensitive area
Cathode lead
2.20 (0.087) x 2.20 (0.087)
Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose!
Critical
components
1
, may only be used in life-support devices or systems
2
with the express written approval of OSRAM OS.
1
A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2
Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2001-02-21
5
˚
0.2 (0.008)
0.1 (0.004)
0...5
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