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TSM2N7002E_07

Description
60V N-Channel MOSFET
File Size295KB,7 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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TSM2N7002E_07 Overview

60V N-Channel MOSFET

TSM2N7002E
60V N-Channel MOSFET
SOT-23
SOT-323
Pin Definition:
1. Gate
2. Source
3. Drain
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
60
3 @ V
GS
= 10V
4 @ V
GS
= 4.5V
I
D
(mA)
300
200
Features
Low On-Resistance: 3Ω
Low Input and Output Leakage
Block Diagram
Application
Direct Logic-Level Interface: TTL/CMOS
Solid-State Relays
Ordering Information
Part No.
TSM2N7002ECX RF
TSM2N7002ECU RF
Package
SOT-23
SOT-323
Packing
3Kpcs / 7” Reel
3Kpcs / 7” Reel
N-Channel MOSFET
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
a,b
o
o
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
T
J
, T
STG
Ta = 25 C
Ta = 75 C
Limit
60
±20
300
1
300
350
220
+150
-55 to +150
Unit
V
V
mA
A
mA
mW
o
o
C
C
Thermal Performance
Parameter
Lead Temperature (1/8” from case)
Junction to Ambient Thermal Resistance (PCB mounted)
Symbol
T
L
JA
Limit
5
357
Unit
S
o
C/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t
5 sec.
c. The power dissipation of the package may result in a continuous drain current.
1/7
Version: A07

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