STE36N50 datasheet, PDF - EEWORLD Datasheet

STE36N50: DescriptionN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE; CategoryDiscrete semiconductor The transistor; File Size248KB，6 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/; Environmental Compliance

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STE36N50 Overview

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	STMicroelectronics
Parts packaging code	ISOTOP
package instruction	FLANGE MOUNT, R-PUFM-X4
Contacts	4
Manufacturer packaging code	ISOTOP
Reach Compliance Code	compli
Other features	UL RECOGNIZED
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (Abs) (ID)	36 A
Maximum drain current (ID)	36 A
Maximum drain-source on-resistance	0.14 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PUFM-X4
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	410 W
Maximum pulsed drain current (IDM)	144 A
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

	STE36N50	36N50DA
Description	N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE	N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE

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