HMC311LP3
/
311LP3E
v03.0907
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
8
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
Typical Applications
The HMC311LP3 / HMC311LP3E is an ideal RF/IF
gain block or LO buffer amplifier for:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV & Cable Modem
• Microwave Radio
Features
P1dB Output Power: +15.5 dBm
Output IP3: +32 dBm
Gain: 14.5 dB
50 Ohm I/O’s
16 Lead 3x3mm SMT Package: 9mm
2
Functional Diagram
General Description
The HMC311LP3 & HMC311LP3E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) Gain Block
MMIC SMT DC to 6 GHz amplifiers. This 3x3mm
QFN packaged amplifier can be used as either a
cascadable 50 Ohm gain stage or to drive the LO of
HMC mixers with up to +17 dBm output power. The
HMC311LP3(E) offers 14.5 dB of gain and an output
IP3 of +32 dBm while requiring only 56 mA from a
+5V supply. The Darlington feedback pair used results
in reduced sensitivity to normal process variations
and yields excellent gain stability over temperature
while requiring a minimal number of external bias
components.
Electrical Specifi cations,
Vs= 5.0 V, Rbias= 22 Ohm, T
A
= +25° C
Parameter
Gain
DC - 1.0 GHz
1.0 - 4.0 GHz
4.0 - 6.0 GHz
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
DC - 1.0 GHz
1.0 - 3.0 GHz
3.0 - 6.0 GHz
DC - 6.0 GHz
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
DC - 6.0 GHz
13.5
12.0
10.0
Min.
13.0
12.5
12.0
Typ.
14.5
14.3
14.0
0.005
0.008
0.012
13
11
15
18
15.5
15.0
13.0
32
30
28
24
4.5
56
74
0.008
0.012
0.016
Max.
Units
dB
dB
dB
dB/ °C
dB/ °C
dB/ °C
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
mA
Gain Variation Over Temperature
Return Loss Input / Output
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Note: Data taken with broadband bias tee on device output.
8 - 10
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC311LP3
/
311LP3E
v03.0907
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Gain & Return Loss
20
15
10
RESPONSE (dB)
5
0
-5
-10
-15
-20
-25
0
1
2
3
4
5
6
7
8
9
FREQUENCY (GHz)
Gain vs. Temperature
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
0
1
2
3
4
8
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
GAIN (dB)
S21
S11
S22
+25 C
+85 C
-40 C
5
6
7
8
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
Output Return Loss vs. Temperature
0
RETURN LOSS (dB)
-10
RETURN LOSS (dB)
-5
+25 C
+85 C
-40 C
-5
+25 C
+85 C
-40 C
-10
-15
-15
-20
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
-20
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
REVERSE ISOLATION (dB)
Noise Figure vs. Temperature
10
9
-5
NOISE FIGURE (dB)
+25 C
+85 C
-40 C
8
7
6
5
4
3
2
1
+25C
+85C
-40C
-10
-15
-20
-25
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 11
HMC311LP3
/
311LP3E
v03.0907
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
8
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
P1dB vs. Temperature
20
18
16
14
P1dB (dBm)
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
+25 C
+85 C
-40 C
Psat vs. Temperature
20
18
16
14
Psat (dBm)
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
+25 C
+85 C
-40 C
Power Compression @ 1 GHz
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
-20 -18 -16 -14 -12 -10 -8
Pout (dBm), GAIN (dB), PAE (%)
Power Compression @ 6 GHz
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
-20 -18 -16 -14 -12 -10 -8
Pout (dBm), GAIN (dB), PAE (%)
Pout
Gain
PAE
Pout
Gain
PAE
-6
-4
-2
0
2
4
6
8
-6
-4
-2
0
2
4
6
INPUT POWER (dBm)
INPUT POWER (dBm)
Output IP3 vs. Temperature
34
32
30
28
26
IP3 (dBm)
24
22
20
18
16
14
12
10
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
+25 C
+85 C
-40 C
Gain, Power, Output IP3 & Supply Current
vs. Supply Voltage @ 1 GHz
GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
40
35
30
25
Icq (mA)
20
15
10
5
0
4.5
4.75
5
Vs(V)
5.25
0
5.5
20
40
60
80
8 - 12
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC311LP3
/
311LP3E
v03.0907
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
RF Input Power (RFIN)(Vs = +5 Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 5.21 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
+7 Vdc
+10 dBm
150 °C
0.339 W
192 °C/W
-65 to +150 °C
-40 to +85 °C
8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Package Information
Part Number
HMC311LP3
HMC311LP3E
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
311
XXXX
311
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 13
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
HMC311LP3
/
311LP3E
v03.0907
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
8
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
Pin Descriptions
Pin Number
1, 2, 4 - 9,
11 - 16
Function
N/C
Description
This pin may be connected to RF ground.
Interface Schematic
3
RFIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
10
RFOUT
RF output and DC Bias for the output stage.
GND
Package bottom must be connected to RF/DC ground.
Application Circuit
Note:
1. Select Rbias to achieve Icq using equation below,
Rbias > 22 Ohm.
2. External blocking capacitors are required on
RFIN and RFOUT.
Icq = Vs - 3.9
Rbias
Recommended Component Values
Frequency (MHz)
Component
50
L1
C1, C2
270 nH
0.01 μF
900
56 nH
100 pF
1900
18 nH
100 pF
2200
18 nH
100 pF
2400
15 nH
100 pF
3500
8.2 nH
100 pF
5200
3.3 nH
100 pF
5800
3.3 nH
100 pF
8 - 14
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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