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313E

Description
0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
CategoryTopical application    Wireless rf/communication   
File Size269KB,6 Pages
ManufacturerHittite Microwave(ADI)
Websitehttp://www.hittite.com/
Download Datasheet Parametric Compare View All

313E Overview

0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER

313E Parametric

Parameter NameAttribute value
Maximum operating temperature85 Cel
Minimum operating temperature-40 Cel
Maximum input power20 dBm
Maximum operating frequency6000 MHz
Minimum operating frequency0.0 MHz
Processing package descriptionPLASTIC, ULTRA SMALL, SOT-26, SMT, 6 PIN
stateACTIVE
structureCOMPONENT
terminal coatingTIN LEAD
Impedance characteristics50 ohm
Microwave RF TypeWIDE BAND LOW POWER
HMC313
/
313E
v04.0307
GaAs InGaP HBT MMIC BROADBAND
AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
Features
P1dB Output Power: +14 dBm
Output IP3: +27 dBm
Gain: 17 dB
Single Supply: +5V
High Reliability GaAs HBT Process
Ultra Small Package: SOT26
Included in the HMC-DK001 Designer’s Kit
5
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
Typical Applications
Ideal as a Driver & Amplifier for:
• 2.2 - 2.7 GHz MMDS
• 3.5 GHz Wireless Local Loop
• 5.0 - 6.0 GHz UNII & HiperLAN
Functional Diagram
General Description
The HMC313 & HMC313E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC
amplifiers that operate from a single Vcc supply. The
surface mount SOT26 amplifier can be used as a
broadband gain stage or used with external matching
for optimized narrow band applications. With Vcc
biased at +5V, the HMC313 & HMC313E offers 17 dB
of gain and +15 dBm of saturated power while only
requiring 50 mA of current.
Electrical Specifications,
T
A
= +25 °C, Vcc = +5.0V
Vcc = +5V
Parameter
Min.
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB) @ 1.0 GHz
Saturated Output Power (Psat) @ 1.0 GHz
Output Third Order Intercept (IP3) @ 1.0 GHz
Noise Figure
Supply Current (Icc)
Note: Data taken with broadband bias tee on device output.
24
11
14
Typ.
DC - 6
17
0.02
7
6
30
14
15
27
6.5
50
20
0.03
Max.
GHz
dB
dB/°C
dB
dB
dB
dBm
dBm
dBm
dB
mA
Units
5 - 28
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com

313E Related Products

313E HMC313 HMC313_07
Description 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Maximum operating temperature 85 Cel 85 °C 85 Cel
Minimum operating temperature -40 Cel -40 °C -40 Cel
Maximum operating frequency 6000 MHz 6000 MHz 6000 MHz
Minimum operating frequency 0.0 MHz - 0.0 MHz
structure COMPONENT COMPONENT COMPONENT
Maximum input power 20 dBm - 20 dBm
Processing package description PLASTIC, ULTRA SMALL, SOT-26, SMT, 6 PIN - PLASTIC, ULTRA SMALL, SOT-26, SMT, 6 PIN
state ACTIVE - ACTIVE
terminal coating TIN LEAD - TIN LEAD
Impedance characteristics 50 ohm - 50 ohm
Microwave RF Type WIDE BAND LOW POWER - WIDE BAND LOW POWER
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