DF005 THRU DF10
Features
· Glass Passivated Die Construction
· Diffused Junction
· Low Forward Voltage Drop, High Current Capability
· Surge Overload Rating to 50A Peak
· Designed for Printed Circuit Board Applications
· Plastic Material - UL Flammability Classification 94V-0
H
J
L
K
CURRENT 1.0 Ampere
VOLTAGE 50 to 1000 Volts
C
B
A
E
D
Dim
DF
Min
7.40
6.20
0.22
1.27
7.60
3.81
8.13
2.40
5.00
0.46
Max
7.90
6.50
0.30
2.03
8.90
4.69
8.51
2.60
5.20
0.58
A
B
C
D
E
G
H
J
K
L
Mechanical Data
· Case : Molded Plastic
· Terminals : Solder Plated Leads,
Solderable per MIL-STD-202, Method 208
· Polarity : As Marked on Case
· Approx. Weight : 0.38 grams
· Mounting Position : Any
· Marking : Type Number
G
A ll Dimens ions in mm
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ T
A
=40
℃
V
RMM
V
RWM
V
R
V
RMS
Io
I
FSM
V
FM
I
RM
I
2
t
C
j
Rθ
JA
T
j
T
STG
DF005 DF01
50
35
100
70
DF02
200
140
DF04
400
280
1.0
50
1.1
10
500
10.4
25
40
DF06
600
420
DF08
800
560
DF10
1000
700
Units
Volts
Volts
Amp
Amps
Volts
μA
A
2S
pF
℃/W
℃
Non-Repetitive Peak Forward Surge Current,
8.3ms single half-sine-wave superimposed
on rated load (JEDEC method)
Forward Voltage (per element)
@ I
F
=1.0 A
@ T
A
=25℃
Peak Reverse Current at Rated
DC Blocking Voltage (per element) @ T
A
=125℃
I
2
t Rating for Fusing (t<8.3ms)
Typical Junction Capacitance
per element (Note 1)
Typical Thermal Resistance,
Junction to Ambient (Note 2)
Operating and Storage Temperature Range
-65 to +150
Notes:
(1) Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
(2) Thermal Resistance, junction to ambient, measured on PC board with 5.0
2
mm (0.03mm thick) land areas.
RATING AND CHARACTERISTIC CURVES DF005 THRU DF10
(A)
1.0
(A)
60 Hz Resistive or
Inductive load
10
T
j
= 25°C
Pulse Width = 300µs
2% duty cycle
I
F
, INST ANT ANEOUS FOR WARD CURRENT
FOR WARD CURRENT
1.0
0.5
I
(AV)
, AVERAGE
0.1
0
40
60
80
100
120
140
0.01
0.4
0.6
0.8
1.0
1.2
1.4
T
A
, AMBIENT TEMPERA TURE (°C)
Fi g. 1 Output Current Deratin g Curve
V
F
, INST ANT ANEOUS FOR WARD VOL TAGE (V)
Fi g. 2 Typ Forward Characteristics (per element )
100
(A)
60
Single half-sine-W ave
(JEDEC Method)
CURRENT
50
C
J
, CAP ACIT ANCE (pF)
T
j
= 25°c
f = 1.0 Mhz
V
sig
= 50 mV p-p
I
FSM
, PEAK FOR WARD SURGE
40
30
10
20
10
0
1
10
100
1
1
10
100
NUMBER OF CYCLES AT 60 Hz
Fi g. 3 Max Non-Repetitive PeakForward Sur ge Current
V
R
, REVERSE VOL TAGE (V)
Fi g. 4 Typ Junction Capacitance (per element )
(µA)
100
CURRENT
T
j
= 125°C
10
I
R
, INST ANT ANEOUS REVERSE
1.0
0.1
T
j
= 25°C
0.01
0
20
40
60
80
100
120
140
PERCENT OF RA TED PEAK REVERSE VOL TAGE (%)
Fi g. 5 Typ Reverse Characteristics (per element)
Embedded System
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