BD533 BD535 BD537
BD534 BD536
Complementary power transistors
Features
■
.
BD533, BD535, and BD537 are NPN
transistors
Description
The devices are manufactured in Planar
technology with “Base Island” layout. The
resulting transistor shows exceptional high gain
performance coupled with very low saturation
voltage. The PNP types are BD534 and BD536.
Figure 1.
1
2
3
TO-220
Internal schematic diagrams
Table 1.
Device summary
Marking
BD533
BD534
BD535
BD536
BD537
Package
Packaging
Order code
BD533
BD534
BD535
BD536
BD537
TO-220
Tube
July 2007
Rev 4
1/11
www.st.com
11
Absolute maximum ratings
BD533 BD534 BD535 BD536 BD537
1
Absolute maximum ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
NPN
PNP
BD533
BD534
45
45
45
Value
BD535
BD536
60
60
60
5
8
1
50
-65 to 150
150
80
80
80
V
V
V
V
A
A
W
°C
°C
BD537
Unit
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
B
P
TOT
T
stg
T
J
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (V
B
= 0)
Collector-base voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
Base current
Total dissipation at T
case
= 25°C
Storage temperature
Max. operating junction temperature
Note:
For PNP types voltage and current values are negative
2/11
BD533 BD534 BD535 BD536 BD537
Table 3.
Electrical characteristics
Absolute maximum ratings
(T
case
= 25°C; unless otherwise specified)
Table 4.
Symbol
I
CBO
Electrical characteristics
Parameter
Collector cut-off current
(I
E
= 0)
Collector cut-off current
(V
BE
= 0)
Emitter cut-off current
(I
C
= 0)
(1)
Test Conditions
V
CB
= rated V
CBO
for BD533/534
for BD535/536
for BD537
V
EB
= 5V
I
C
= 100mA
for BD533/534
for BD535/536
for BD537
I
C
= 2A
__
I
C
= 6A
__
I
C
= 2A
___
I
B
= 0.2A
I
B
= 0.6A
V
CE
= 2V
V
CE
= 45 V
V
CE
= 60 V
V
CE
= 80 V
Min.
Typ.
Max.
0.1
0.1
0.1
0.1
1
Unit
mA
mA
mA
mA
mA
V
V
V
I
CES
I
EBO
V
CEO(sus)
Collector-emitter
sustaining voltage
(I
B
= 0)
Collector-emitter
saturation voltage
Base-emitter voltage
45
60
80
0.8
0.8
1.5
V
CE(sat)(1)
V
BE(1)
V
V
V
h
FE(1)
DC current gain
I
C
= 10mA__ V
CE
= 5V
for BD533/534
for BD535/536
for BD537
I
C
= 500mA_ V
CE
= 2V
I
C
= 2A_
V
CE
= 2V
for BD533/534
for BD535/536
for BD537
20
20
15
40
25
25
15
1. Pulsed duration = 300 ms, duty cycle
≥1.5%.
Note:
For PNP types voltage e current values are negative.
3/11
Absolute maximum ratings
BD533 BD534 BD535 BD536 BD537
1.1
Electrical characteristic (curves)
Figure 2.
Safe operating area
Figure 3.
Derating curve
Figure 4.
DC current gain (NPN)
Figure 5.
DC current gain (PNP)
Figure 6.
DC current gain (NPN)
Figure 7.
DC current gain (PNP)
4/11
BD533 BD534 BD535 BD536 BD537
Figure 8.
Collector-emitter saturation
voltage (NPN)
Figure 9.
Absolute maximum ratings
Collector-emitter saturation
voltage (PNP)
Figure 10. Base-emitter saturation
voltage (NPN)
Figure 11. Base-emitter saturation
voltage (PNP)
Figure 12. Base-emitter on voltage
(NPN)
Figure 13. Base-emitter on voltage
(PNP)
5/11
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