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D2SB60-4000

Description
Bridge Rectifiers VRM=600 IFSM=80
CategoryDiscrete semiconductor    diode   
File Size361KB,4 Pages
ManufacturerSHINDENGEN
Websitehttps://www.shindengen.com
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D2SB60-4000 Overview

Bridge Rectifiers VRM=600 IFSM=80

D2SB60-4000 Parametric

Parameter NameAttribute value
MakerSHINDENGEN
package instructionR-PSIP-T4
Contacts4
Reach Compliance Codeunknown
Minimum breakdown voltage600 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.05 V
JESD-30 codeR-PSIP-T4
Maximum non-repetitive peak forward current80 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Certification statusNot Qualified
Maximum reverse current0.00001 µA
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Bridge Diode
シングルインライン型
Single In-line Package
D2SB60
600V 1.5A
特長
• 薄型 S
I
P パッケージ
• 高
I
FSM
■外観図 
OUTLINE
Package
2S
Unit : mm
Weight : 2.0g typ.)
品名
Type No.
20
ロッ
ト記号
(例)
Date code
3.5
D2SB
∼ ∼
② ③
級表示
(例)
Class
60
+
68
11
Feature
• Thin-S
I
P
• Large
I
FSM
13.5
外½図については新電元 Web サイト又は〈半導½½品一覧表〉をご参照下
さい。捺印表示については捺印仕様をご確認下さい。
For details of outline dimensions, refer to our web site or the Semiconductor
Short Form Catalog. As for the marking, refer to the specification “Marking,
Terminal Connection”
.
■定格表 
RATINGS
■定格表
RATINGS
●絶対最大定格
Absolute Maximum Ratings(
指定のない場合
Tl =25℃/
unless otherwise specified
項  目
Item
保存温度
Storage Temperature
接合部温度
Operation Junction Temperature
せん頭逆電圧
Maximum Reverse Voltage
出力電流
Average Rectified Forward Current
せん頭サージ順電流
Peak Surge Forward Current
電流二乗時間積
Current Squared Time
記号
条 件
Symbol Conditions
T
stg
T
j
V
RM
I
O
I
FSM
I
2
t
品 名
Type No.
D2SB60
−40∼150
150
600
単½
Unit
V
A
A
A
2
s
50Hz 正弦波,抵抗負荷,プリント基板実装,
Ta = 25℃
50Hz sine wave, Resistance load, On glass-epoxy substrate,
Ta = 25℃
50Hz 正弦波,非繰り返し1サイクルせん頭値,Tj = 25℃
50Hz sine wave , Non-repetitive 1cycle peak value, Tj = 25℃
2ms≦t<10ms,Tj = 25℃
1.5
80
32
●電気的・熱的特性 Electrical
Characteristics(
指定のない場合
Tl =25℃/
unless otherwise specified
順電圧
Forward Voltage
逆電流
Reverse Current
熱抵抗
Thermal Resistance
V
F
I
R
θjl
θja
パルス測定,1素子½たりの規格値
Pulse measurement, per diode
V
R =
V
RM, パルス測定,1素子½たりの規格値
Pulse measurement, per diode
I
F =
0.75A,
MAX
MAX
MAX
MAX
1.05
10
10
47
V
μA
℃/W
接合部・リード間
Junction to Lead
接合部・周囲間
Junction to Ambient
58
(J534-1)
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