STPS40SM80C
Power Schottky rectifier
Features
■
■
■
■
■
A1
K
A2
High junction temperature capability
Optimized trade-off between leakage current
and forward voltage drop
Low leakage current
Avalanche capability specified
Insulated package TO-220FPAB
– insulated voltage: 2000 V
– package capacitance: 45 pF
A1
K
K
K
A2
A2
A1
D
2
PAK
STPS40SM80CG-TR
I
2
PAK
STPS40SM80CR
K
Description
This dual diode Schottky rectifier is suited for high
frequency switch mode power supply.
Packaged in TO-220AB, I
2
PAK, D
2
PAK and TO-
220FPAB, this device is particularly suited for use
in notebook, game station, LCD TV and desktop
adapters, providing these applications with a
good efficiency at both low and high load.
Table 1.
Device summary
Symbol
I
F(AV)
V
RRM
T
j
(max)
V
F
(typ)
Value
2 x 20 A
80 V
175 °C
520 mV
V
RRM
V
R
V
AR
V
I
2 x I
O
I
F
I
O
A2
A1
K
A1
K
A2
TO-220AB
STPS40SM80CT
TO-220FPAB
STPS40SM80CFP
Figure 1.
Electrical characteristics
(a)
I
"Forward"
X
X
V
I
R
VTo V
F(Io)
V
F
V
F(2xIo)
"Reverse"
I
AR
a. V
ARM
and I
ARM
must respect the reverse safe
operating area defined in
Figure 13.
V
AR
and I
AR
are
pulse measurements (t
p
< 1 µs). V
R
, I
R
, V
RRM
and V
F
,
are static characteristics
April 2011
Doc ID 018719 Rev 1
1/11
www.st.com
11
Characteristics
STPS40SM80C
1
Characteristics
Table 2.
Symbol
V
RRM
I
F(RMS)
I
F(AV)
Absolute ratings (limiting values, per diode, at T
amb
= 25 °C unless
otherwise specified)
Parameter
Repetitive peak reverse voltage
Forward rms current
Average forward current,
δ
= 0.5
Surge non repetitive
forward current
T
c
= 145 °C Per diode
TO-220AB,
I
2
PAK, D
2
PAK T
c
= 145 °C Per device
TO-220FPAB
T
c
= 90 °C
Per diode
T
c
= 25 °C
Value
80
30
20
40
20
200
9500
100
100
-65 to +175
175
A
W
V
V
°C
°C
Unit
V
A
A
I
FSM
t
p
= 10 ms sinusoidal
P
ARM(1)
Repetitive peak avalanche power
V
ARM(2)
V
ASM(2)
T
stg
T
j
Maximum repetitive peak
avalanche voltage
Maximum single pulse
peak avalanche voltage
Storage temperature range
Maximum operating junction temperature
(3)
T
j
= 25 °C, t
p
= 1 µs
t
p
< 1 µs, T
j
< 150 °C, I
AR
< 28.5 A
t
p
< 1 µs, T
j
< 150 °C, I
AR
< 28.5 A
1. For temperature or pulse time duration deratings, please refer to figure 3 and 4. More details regarding the
avalanche energy measurements and diode validation in the avalanche are provided in the application
notes AN1768 and AN2025.
2. See
Figure 13
3.
1
dPtot <
condition to avoid thermal runaway for a diode on its own heatsink
Rth(j-a)
dTj
Table 3.
Symbol
Thermal parameters
Parameter
TO-220AB
I
2
PAK, D
2
PAK
per diode
total
per diode
total
Value
1.60
0.88
4.90
4.00
0.15
3.10
°C/W
°C/W
Unit
R
th(j-c)
Junction to case
TO-220FPAB
TO-220AB
I
2
PAK, D
2
PAK
TO-220FPAB
R
th(c)
Coupling
When the two diodes 1 and 2 are used simultaneously:
ΔT
j
(diode 1) = P(diode 1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
2/11
Doc ID 018719 Rev 1
STPS40SM80C
Table 4.
Symbol
I
R(1)
Characteristics
Static electrical characteristics (per diode)
Parameter
Reverse leakage current
Test conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
V
R
= V
RRM
I
F
= 10 A
I
F
= 20 A
I
F
= 40 A
Min.
-
-
-
-
-
-
-
-
Typ.
15
10
0.590
0.520
0.720
0.605
0.875
0.725
Max.
50
30
0.655
0.560
0.800
0.690
0.985
0.850
V
Unit
µA
mA
V
F(2)
Forward voltage drop
1. Pulse test: t
p
= 5 ms,
δ
< 2 %
2. Pulse test: t
p
= 380 µs,
δ
< 2 %
To evaluate the conduction losses use the following equation:
P = 0.53 x I
F(AV)
+ 0.008 x I
F2(RMS)
Figure 2.
Average forward power dissipation Figure 3.
versus average forward current
(per diode)
24
δ
= 0.5
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
20
18
16
14
12
10
8
6
4
2
0
P
F(AV)
(W)
T
δ
= t
p
/ T
I
F(AV)
(A)
Rth(j-a) = Rth(j-c)
δ
=1
22
20
18
16
14
12
10
8
6
4
2
0
0
25
50
t
p
δ
= 0.1
δ
= 0.05
δ
= 0.2
TO-220AB / I PAK / D PAK
2
2
TO-220FPAB
I
F(AV)
(A)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
T
amb
(°C)
75
100
125
150
175
Figure 4.
Normalized avalanche power
derating versus pulse duration
Figure 5.
Normalized avalanche power
derating versus junction
temperature
1
P
ARM
(tp)
P
ARM
(1µs)
1.2
1
P
ARM
(T
j
)
P
ARM
(25 °C)
0.1
0.8
0.6
0.01
0.4
0.2
0.001
0.01
t
p
(µs)
0.1
1
10
100
1000
0
25
T
j
(°C)
50
75
100
125
150
Doc ID 018719 Rev 1
3/11
Characteristics
STPS40SM80C
Figure 6.
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
TO-220AB / I PAK / D PAK
2
2
Figure 7.
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
TO-220FPAB
220
200
180
160
140
120
100
80
60
40
20
I
M
(A)
120
110
100
90
T
c
= 25 °C
T
c
= 75 °C
T
c
= 125 °C
80
70
60
50
40
30
20
t
δ
= 0.5
1.E-02
1.E-01
I
M
(A)
T
c
= 25 °C
T
c
= 75 °C
T
c
= 125 °C
I
M
t
δ
= 0.5
1.E-02
1.E-01
I
M
0
1.E-03
t(s)
1.E+00
10
0
1.E-03
t(s)
1.E+00
Figure 8.
Relative thermal impedance
junction to case versus pulse
duration
TO-220AB / I PAK / D PAK
2
2
Figure 9.
Relative thermal impedance
junction to case versus pulse
duration (TO-220FPAB)
TO-220FPAB
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Z
th(j-c)
/R
th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
Z
th(j-c)
/R
th(j-c)
Single pulse
0.2
0.1
Single pulse
0.0
1.E-04
t
p
(s)
1.E-03
1.E-02
1.E-01
1.E+00
0.0
1.E-03
t
p
(s)
1.E-02
1.E-01
1.E+00
1.E+01
Figure 10. Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
1.E+05
Figure 11. Junction capacitance versus
reverse voltage applied
(typical values, per diode)
10000
I
R
(µA)
T
j
= 150 °C
C(pF)
F = 1 MHz
V
osc
= 30 mV
RMS
T
j
= 25 °C
1.E+04
T
j
= 125 °C
T
j
= 100 °C
T
j
= 75 °C
1000
1.E+03
1.E+02
T
j
= 50 °C
1.E+01
T
j
= 25 °C
1.E+00
0
10
20
30
40
50
60
V
R
(V)
70
80
100
1
V
R
(V)
10
100
4/11
Doc ID 018719 Rev 1
STPS40SM80C
Characteristics
Figure 12. Forward voltage drop versus
forward current (per diode)
40
35
30
25
20
15
10
5
0
0.0
T
j
= 25 °C
(Maximum values)
T
j
= 125 °C
(Typical values)
Figure 13. Reverse safe operating area
(t
p
< 1 µs and T
j
< 150 °C)
29.0
I
FM
(A)
T
j
= 125 °C
(Maximum values)
28.0
27.0
26.0
25.0
24.0
23.0
22.0
21.0
20.0
I
arm
(A)
I
arm
(V
arm
) 150 °C, 1µs
V
FM
(V)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
19.0
100
V
arm
(V)
105
110
115
120
125
130
135
140
145
150
Figure 14. Thermal resistance junction to ambient versus copper surface under tab for D
2
PAK
80
70
60
50
40
30
20
10
0
0
5
10
15
20
25
30
D PAK
2
R
th(j-a)
(°C/W)
epoxy printed board copper thickness = 35 µm
S
Cu
(cm )
35
40
2
Doc ID 018719 Rev 1
5/11
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