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BD140-10

Description
Bipolar Transistors - BJT PNP Silicon Trnsistr
CategoryDiscrete semiconductor    The transistor   
File Size141KB,9 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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BD140-10 Overview

Bipolar Transistors - BJT PNP Silicon Trnsistr

BD140-10 Parametric

Parameter NameAttribute value
Brand NameSTMicroelectronics
Is it Rohs certified?conform to
MakerSTMicroelectronics
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum collector current (IC)1.5 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)63
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)13 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)75 MHz
BD135 - BD136
BD139 - BD140
Complementary low voltage transistor
Features
Products are pre-selected in DC current gain
Application
General purpose
3
2
1
Description
These epitaxial planar transistors are mounted in
the SOT-32 plastic package. They are designed
for audio amplifiers and drivers utilizing
complementary or quasi-complementary circuits.
The NPN types are the BD135 and BD139, and
the complementary PNP types are the BD136
and BD140.
SOT-32
Figure 1.
Internal schematic diagram
NPN
PNP
Table 1.
Device summary
Marking
BD135
BD135-16
BD136
BD136-16
BD139
SOT-32
BD139-10
BD139-16
BD140
BD140-10
BD140-16
BD139-10
BD139-16
BD140
BD140-10
BD140-16
Rev 5
1/9
www.st.com
9
Order codes
BD135
BD135-16
BD136
BD136-16
BD139
Package
Packaging
Tube
May 2008

BD140-10 Related Products

BD140-10 BD135-16
Description Bipolar Transistors - BJT PNP Silicon Trnsistr Bipolar Transistors - BJT NPN Silicon Trnsistr
Brand Name STMicroelectronics STMicroelectronics
Maker STMicroelectronics STMicroelectronics
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
Maximum collector current (IC) 1.5 A 1.5 A
Collector-emitter maximum voltage 80 V 45 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 63 100
JEDEC-95 code TO-126 TO-126
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP NPN
Maximum power dissipation(Abs) 13 W 13 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 75 MHz 250 MHz
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