Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
20%.
www.onsemi.com
2
MJE2955T (PNP), MJE3055T (NPN)
10
7.0
5.0
dc
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
5.0
100
ms
IC, COLLECTOR CURRENT (AMP)
5.0 ms
1.0 ms
T
J
= 150°C
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED
T
C
= 25°C (D = 0.1)
20
30
7.0
10
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
50 60
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on T
J(pk)
= 150°C. T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
T
J(pk)
≤
150°C. At high case temperatures, thermal
limitations will reduce the power that can be handled to
values less than the limitations imposed by second
breakdown.
Figure 1. Active−Region Safe Operating Area
500
PD, POWER DISSIPATION (WATTS)
300
200
hFE, DC CURRENT GAIN
100
25°C
50
- 55°C
30
20
10
5.0
0.01
V
CE
= 2.0 V
T
J
= 150°C
90
80
70
60
50
40
30
20
10
0
0
25
125
50
75
100
T
C
, CASE TEMPERATURE (°C)
150
175
MJE3055T
MJE2955T
0.02
0.05 0.1
0.2
0.5 1.0
2.0
I
C
, COLLECTOR CURRENT (AMP)
5.0
10
Figure 2. DC Current Gain
MJE2955T
2.0
T
J
= 25°C
1.6
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
0.1
0.2 0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (AMP)
5.0
10
0
0.1
1.4
1.2
T
J
= 25°C
Figure 3. Power Derating
MJE3055T
1.2
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 3.0 V
0.4
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 2.0 V
0.8
V
CE(sat)
@ I
C
/I
B
= 10
0.2 0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (AMP)
5.0
10
Figure 4. “On” Voltages
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3
MJE2955T (PNP), MJE3055T (NPN)
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
---
---
0.080
BASE
COLLECTOR
EMITTER
COLLECTOR
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
---
---
2.04
−T−
B
4
SEATING
PLANE
F
T
S
C
Q
1 2 3
A
U
K
H
Z
L
V
G
D
N
R
J
STYLE 1:
PIN 1.
2.
3.
4.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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