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MJE2955TG

Description
Bipolar Transistors - BJT 10A 60V 125W PNP
CategoryDiscrete semiconductor    The transistor   
File Size58KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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Bipolar Transistors - BJT 10A 60V 125W PNP

MJE2955TG Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
Parts packaging codeTO-220AB
package instructionLEAD FREE, PLASTIC, CASE 221A-09, 3 PIN
Contacts3
Manufacturer packaging code221A-09
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time1 week
Shell connectionCOLLECTOR
Maximum collector current (IC)10 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)5
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)75 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn) - annealed
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)2 MHz
Base Number Matches1
MJE2955T (PNP),
MJE3055T (NPN)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and
switching applications.
Features
www.onsemi.com
High Current Gain − Bandwidth Product
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
P
D
(Note 1)
T
J
, T
stg
Value
60
70
5.0
10
6.0
75
0.6
−55 to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
10 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 VOLTS − 75 WATTS
PNP
COLLECTOR 2, 4
NPN
COLLECTOR 2, 4
1
BASE
EMITTER 3
1
BASE
EMITTER 3
4
W
W/°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Safe Area Curves are indicated by Figure 1. Both limits are applicable and
must be observed.
TO−220
CASE 221A−09
STYLE 1
1
2
3
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Max
1.67
Unit
°C/W
MJExx55T = Device Code
xx = 29 or 30
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
MARKING DIAGRAM
MJExx55TG
AY WW
ORDERING INFORMATION
Device
MJE2955TG
MJE3055TG
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Package
TO−220
(Pb−Free)
TO−220
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
©
Semiconductor Components Industries, LLC, 2015
1
January, 2015 − Rev. 12
Publication Order Number:
MJE2955T/D
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