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SI4925DY-T1-E3

Description
MOSFET 30V 6.1A 2W
CategoryDiscrete semiconductor    The transistor   
File Size71KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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SI4925DY-T1-E3 Overview

MOSFET 30V 6.1A 2W

SI4925DY-T1-E3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
Reach Compliance Codecompliant
ECCN codeEAR99
Si4925DY
Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
−30
30
FEATURES
I
D
(A)
−6.3
−5.3
r
DS(on)
(W)
0.032 @ V
GS
=
−10
V
0.045 @ V
GS
=
−4.5
V
D
TrenchFETr Power MOSFET
Pb-free
Available
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
Ordering Information: Si4925DY
Si4925DY-T1 (with Tape and Reel)
:
Si4925DY—E3 (Lead (Pb)-Free)
Si4925DY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
8
7
6
5
D
1
D
1
D
2
D
2
G
1
S
1
S
2
G
2
D
1
P-Channel MOSFET
D
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 secs
−30
"20
−6.3
−5.0
−40
−1.7
2
1.3
Steady State
Unit
V
−4.7
−3.7
−0.9
1.1
0.70
−55
to 150
W
_C
A
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
Document Number: 71795
S-50402—Rev. E, 07-Mar-05
www.vishay.com
t
v
10 sec
Steady-State
Steady-State
Symbol
R
thJA
R
thJF
Typ
45
85
28
Max
62.5
110
35
Unit
_C/W
C/W
1

SI4925DY-T1-E3 Related Products

SI4925DY-T1-E3 SI4925DY-E3
Description MOSFET 30V 6.1A 2W MOSFET 30V 6.1A 2W
Is it Rohs certified? conform to conform to
Maker Vishay Vishay
Reach Compliance Code compliant compliant

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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