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BD249-S

Description
Bipolar Transistors - BJT 45V 25A NPN
CategoryDiscrete semiconductor    The transistor   
File Size59KB,4 Pages
ManufacturerBourns
Websitehttp://www.bourns.com
Environmental Compliance
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BD249-S Overview

Bipolar Transistors - BJT 45V 25A NPN

BD249-S Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerBourns
package instructionPLASTIC, FM-3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)25 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)5
JESD-30 codeR-PSFM-T3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)125 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
BD249, BD249A, BD249B, BD249C
NPN SILICON POWER TRANSISTORS
Designed for Complementary Use with the
BD250 Series
125 W at 25°C Case Temperature
25 A Continuous Collector Current
40 A Peak Collector Current
Customer-Specified Selections Available
C
B
SOT-93 PACKAGE
(TOP VIEW)
1
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BD249
Collector-emitter voltage (R
BE
= 100
Ω)
BD249A
BD249B
BD249C
BD249
Collector-emitter voltage (I
C
= 30 mA)
BD249A
BD249B
BD249C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
½LI
C
2
T
j
T
stg
T
L
V
CEO
V
CER
SYMBOL
VALUE
55
70
90
115
45
60
80
100
5
25
40
5
125
3
90
-65 to +150
-65 to +150
250
V
A
A
A
W
W
mJ
°C
°C
°C
V
V
UNIT
This value applies for t
p
0.3 ms, duty cycle
10%.
Derate linearly to 150°C case temperature at the rate of 1 W/°C.
Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 0.4 A, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= 20 V.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1

BD249-S Related Products

BD249-S BD249B-S BD249A-S BD249C-S
Description Bipolar Transistors - BJT 45V 25A NPN Bipolar Transistors - BJT 80V 25A NPN Bipolar Transistors - BJT 60V 25A NPN Bipolar Transistors - BJT 100V 25A NPN
Is it Rohs certified? conform to conform to conform to conform to
Maker Bourns Bourns Bourns Bourns
package instruction PLASTIC, FM-3 PLASTIC, FM-3 PLASTIC, FM-3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3 3
Reach Compliance Code not_compliant not_compliant not_compliant unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 25 A 25 A 25 A 25 A
Collector-emitter maximum voltage 45 V 80 V 60 V 100 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 5 5 5 5
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN
Maximum power dissipation(Abs) 125 W 125 W 125 W 125 W
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON SILICON SILICON
JESD-609 code e1 e1 e1 -
Certification status Not Qualified Not Qualified Not Qualified -
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) -
transistor applications SWITCHING SWITCHING SWITCHING -
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