BLF2043F
UHF power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
IMPORTANT NOTICE
Dear customer,
As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as
an independent company under the new trade name Ampleon, which will be used
in future data sheets together with new contact details.
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The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © Ampleon B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest
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Thank you for your cooperation and understanding,
Ampleon
Philips Semiconductors
Product specification
UHF power LDMOS transistor
FEATURES
•
High power gain
•
Easy power control
•
Excellent ruggedness
•
Source on mounting base eliminates DC isolators,
reducing common mode inductance
•
Designed for broadband operation (HF to 2.2 GHz).
APPLICATIONS
•
Communication transmitter applications in the UHF
frequency range.
3
1
BLF2043F
PINNING - SOT467C
PIN
1
2
3
drain
gate
source, connected to flange
DESCRIPTION
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT467C) with a ceramic cap. The common source is
connected to the mounting flange.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°C
in a common source test circuit.
MODE OF OPERATION
CW, class-AB (2-tone)
f
(MHz)
f
1
= 2200; f
2
= 2200.1
V
DS
(V)
26
P
L
(W)
10 (PEP)
2
Top view
MBK584
Fig.1 Simplified outline.
G
p
(dB)
>11
η
D
(%)
>30
d
im
(dBc)
≤−26
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
DS
V
GS
I
D
T
stg
T
j
drain-source voltage
gate-source voltage
drain current (DC)
storage temperature
junction temperature
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
PARAMETER
−
−
−
−65
−
MIN.
65
±15
2.2
+150
200
MAX.
V
V
A
°C
°C
UNIT
2002 Mar 05
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
R
th mb-h
Note
1. Thermal resistance is determined under RF operating conditions.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
is
C
os
C
rs
PARAMETER
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
gate leakage current
forward transconductance
drain-source on-state resistance
input capacitance
output capacitance
feedback capacitance
CONDITIONS
V
GS
= 0; I
D
= 0.2 mA
V
DS
= 10 V; I
D
= 20 mA
V
GS
= 0; V
DS
= 26 V
V
GS
= V
GSth
+ 9 V; V
DS
= 10 V
V
GS
=
±15
V; V
DS
= 0
V
DS
= 10 V; I
D
= 0.75 A
V
GS
= 10 V; I
D
= 0.75 A
V
GS
= 0; V
DS
= 26 V; f = 1 MHz
V
GS
= 0; V
DS
= 26 V; f = 1 MHz
V
GS
= 0; V
DS
= 26 V; f = 1 MHz
MIN.
75
4
−
2.8
−
−
−
−
−
−
TYP.
−
−
−
−
−
0.5
1.2
13
11
0.5
PARAMETER
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
CONDITIONS
T
mb
= 25
°C;
note 1
BLF2043F
VALUE
5
0.5
UNIT
K/W
K/W
MAX.
−
5
1.5
−
40
−
−
−
−
−
UNIT
V
V
µA
A
nA
S
Ω
pF
pF
pF
handbook, halfpage
10
2
MGW642
C
(pF)
10
Cos
Cis
Crs
1
10
−1
0
10
20
VDS (V)
30
V
GS
= 0; f = 1 MHz.
Fig.2
Input, output and feedback capacitance as
functions of drain-source voltage, typical
values.
2002 Mar 05
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2043F
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
h
= 25
°C;
R
th mb-h
= 0.4 K/W; unless otherwise specified.
MODE OF OPERATION
CW, class-AB (2-tone)
f
(MHz)
f
1
= 2200; f
2
= 2200.1
V
DS
(V)
26
I
DQ
(mA)
85
P
L
(W)
10 (PEP)
G
p
(dB)
>11
η
D
(%)
>30
d
im
(dBc)
≤−26
Ruggedness in class-AB operation
The BLF2043F is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V
DS
= 26 V; f = 2200 MHz at rated load power.
handbook, halfpage
15
MGW643
60
MGW644
handbook, halfpage
0
Gp
(dB)
10
Gp
η
D
(%)
40
d im
(dBc)
−20
d3
d5
−40
d7
η
D
5
20
−60
0
0
4
8
12
PL (PEP) (W)
0
16
−80
0
4
8
12
PL (PEP) (W)
16
V
DS
= 26 V; I
DQ
= 85 mA;
f
1
= 2000 MHz; f
2
= 2000.1 MHz.
V
DS
= 26 V; I
DQ
= 85 mA; T
h
≤
25
°C;
f
1
= 2000 MHz; f
2
= 2000.1 MHz.
Fig.3
Power gain and efficiency as functions of
peak envelope load power, typical values.
Fig.4
Intermodulation distortion as a function of
peak envelope load power; typical values.
2002 Mar 05
4
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2043F
handbook, halfpage
15
MGW645
60
MGW646
handbook, halfpage
0
Gp
(dB)
10
Gp
η
D
(%)
40
d im
(dBc)
−20
d3
−40
d5
d7
η
D
5
20
−60
0
0
4
8
12
PL (PEP) (W)
0
16
−80
0
4
8
12
PL (PEP) (W)
16
V
DS
= 26 V; I
DQ
= 85 mA;
f
1
= 2200 MHz; f
2
= 2200.1 MHz.
V
DS
= 26 V; I
DQ
= 85 mA; T
h
≤
25
°C;
f
1
= 2200 MHz; f
2
= 2200.1 MHz.
Fig.5
Power gain and efficiency as functions of
peak envelope load power, typical values.
Fig.6
Intermodulation distortion as a function of
peak envelope load power; typical values.
MGW647
handbook, halfpage
0
d3
(dBc)
−20
−40
(1)
(2)
(3)
−60
0
4
8
12
PL (PEP) (W)
16
V
DS
= 26 V; T
h
≤
25
°C;
f
1
= 2200 MHz; f
2
= 2200.1 MHz.
(1) I
DQ
= 115 mA.
(2) I
DQ
= 55 mA.
(3) I
DQ
= 85 mA.
Fig.7
Intermodulation distortion as a function of
peak envelope load power; typical values.
2002 Mar 05
5
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