FW297
Power MOSFET
60V, 58mΩ, 4.5A, Dual N-Channel
Features
•
Low On-Resistance
•
4.0V Drive
•
ESD Diode-Protected Gate
•
Pb-Free, Halogen Free and RoHS Compliance
VDSS
60V
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RDS(on) Max
58mΩ@ 10V
84mΩ@ 4.5V
95mΩ@ 4.0V
ID Max
4.5A
Specifications
Absolute Maximum Ratings
at Ta = 25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
PW
≤
10μs, duty cycle
≤
1%
Power Dissipation
When mounted on ceramic substrate
(2000mm
×
0.8mm) 1 unit, PW≤10s
Total Dissipation
When mounted on ceramic substrate
(2000mm
×
0.8mm) , PW≤10s
Junction Temperature
Storage Temperature
Tj
Tstg
150
−55
to +150
°C
°C
2
2
Electrical Connection
N-Channel
8
7
6
5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
1
2
3
4
Symbol
VDSS
VGSS
ID
IDP
Value
60
±20
4.5
18
Unit
V
V
A
A
PD
1.8
W
Packing Type : TL
PT
2.2
W
Marking
FW297
TL
LOT No.
Thermal Resistance Ratings
Parameter
Junction to Ambient 1 unit
,
PW≤10s
Junction to Ambient
1
Symbol
R
θJA
R
θJA
Value
69.4
56.8
Unit
°C/W
*
1
1
2 units, PW≤10s
*
Note:
*
When mounted on ceramic substrate (2000mm
2
×
0.8mm)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2015
April 2015 - Rev. 0
1
Publication Order Number :
FW297/D
FW297
Electrical Characteristics
at Ta
=
25°C
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
Static Drain to Source On-State Resistance
RDS(on)2
RDS(on)3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=4.5A, VGS=0V
VDS=30V, VGS=10V, ID=4.5A
See specified Test Circuit
VDS=20V, f=1MHz
Conditions
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=4.5A
ID=4.5A, VGS=10V
ID=2A, VGS=4.5V
ID=2A, VGS=4.0V
1.2
4.7
45
60
68
750
59
47
7
16
50
30
14
2.3
2.8
0.81
1.2
58
84
95
Value
min
60
1
±10
2.6
typ
max
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
10V
0V
VIN
VDD=30V
ID=4.5A
RL=6.67Ω
D
G
FW297
P.G
50Ω
S
VOUT
VIN
PW=10μs
D.C.≤1%
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2
FW297
Package Dimensions
FW297-TL-2W
SOIC-8
CASE 751CR
ISSUE O
Unit : mm
Recommended Soldering
Footprint
1: Source1
2: Gate1
3: Source2
4: Gate2
5: Drain2
6: Drain2
7: Drain1
8: Drain1
ORDERING INFORMATION
Device
FW297-TL-2W
Package
SOIC8
SC-87, SOT-96
Shipping
2,500 pcs. / Tape & Reel
Note
Pb-Free and Halogen Free
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel
Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the FW297 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all
applicable copyright laws and is not for resale in any manner.
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