Si4946EY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
8
7
6
5
D
1
D
1
D
2
D
2
G
D
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Single Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
L = 0 1 mH
0.1
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
Limit
60
"20
4.5
3.8
30
2
12
7.2
2.4
1.7
−55
to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
Document Number: 70157
S-50524—Rev. E, 28-Mar-05
www.vishay.com
Symbol
R
thJA
Limit
62.5
Unit
_C/W
1
Si4946EY
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
Drain-Source On-State
Drain Source On State Resistance
b
Forward Transconductance
b
Diode Forward Voltage
b
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS( )
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V, T
J
= 55_C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 4.5 A
V
GS
= 4.5 V, I
D
= 3.9 A
V
DS
= 15 V, I
D
= 4.5 A
I
S
= 2 A, V
GS
= 0 V
20
0.045
0.055
13
0.9
1.2
0.055
0.075
1
3
"100
2
25
V
nA
mA
A
W
S
V
Symbol
Test Condition
Min
Typ
a
Max
Unit
Dynamic
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 2 A, di/dt = 100 A/ms
V
DD
= 30 V, R
L
= 30
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
1
13
11
36
11
35
V
DS
= 30 V, V
GS
= 10 V, I
D
= 4.5 A
19
4
3
3.6
20
20
60
20
60
ns
W
30
nC
Notes
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?70157.
www.vishay.com
Document Number: 70157
S-50524—Rev. E, 28-Mar-05
4
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
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