MCP1755/1755S
300 mA, 16V, High-Performance LDO
Features:
•
•
•
•
•
•
•
High PSRR: >70 dB @ 1 kHz, typical
68.0 µA Typical Quiescent Current
Input Operating Voltage Range: 3.6V to 16.0V
300 mA Output Current for all Output Voltages
Low Dropout Voltage, 300 mV typical @ 300 mA
Standard Output Voltage Options (1.8V, 2.5V,
2.8V, 3.0V, 3.3V, 4.0V, 5.0V)
Output Voltage Range 1.8V to 5.5V in 0.1V
Increments (tighter increments are also possible
per design)
Output Voltage Tolerances of ±2.0% over entire
Temperature Range
Stable with Minimum 1.0 µF Output Capacitance
Power Good Output
Shutdown Input
True Current Foldback Protection
Short-Circuit Protection
Overtemperature Protection
Description:
The MCP1755/1755S is a family of CMOS low-dropout
(LDO) voltage regulators that can deliver up to 300 mA
of current while consuming only 68.0 µA of quiescent
current (typical). The input operating range is specified
from 3.6V to 16.0V, making it an ideal choice for four to
six primary cell battery-powered applications, 12V
mobile applications and one to three cell Li-Ion-
powered applications.
The MCP1755/1755S is capable of delivering 300 mA
with only 300 mV (typical) of input-to-output voltage
differential. The output voltage tolerance of the
MCP1755 is typically +0.85% at +25°C and ±2.0%
maximum over the operating junction temperature
range of -40°C to +125°C. Line regulation is ±0.01%
typical at +25°C.
Output voltages available for the MCP1755/1755S
range from 1.8V to 5.5V. The LDO output is stable when
using only 1 µF of output capacitance. Ceramic,
tantalum or aluminum electrolytic capacitors may all be
used for input and output. Overcurrent limit and
overtemperature shutdown provide a robust solution for
any application.
The MCP1755/1755S family has a true current foldback
feature. When the load impedance decreases beyond
the MCP1755/1755S load rating, the output current and
voltage will gracefully foldback towards 30 mA at about
0V output. When the load impedance increases and
returns to the rated load, the MCP1755/1755S will
follow the same foldback curve as the device comes out
of current foldback.
Package options for the MCP1755 include the
SOT-23-5, SOT-223-5 and 8-lead 2 x 3 DFN.
Package options for the MCP1755S device include the
SOT-223-3 and 8-lead 2 x 3 DFN.
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Applications:
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•
•
•
•
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•
•
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Battery-powered Devices
Battery-powered Alarm Circuits
Smoke Detectors
CO
2
Detectors
Pagers and Cellular Phones
Smart Battery Packs
Portable Digital Assistant (PDA)
Digital Cameras
Microcontroller Power
Consumer Products
Battery-powered Data Loggers
Related Literature:
• AN765,
“Using Microchip’s Micropower LDOs”
(DS00765), Microchip Technology Inc., 2007
• AN766,
“Pin-Compatible CMOS Upgrades to
BiPolar LDOs”
(DS00766), Microchip Technology
Inc., 2003
• AN792,
“A Method to Determine How Much
Power a SOT-23 Can Dissipate in an Application”
(DS00792), Microchip Technology Inc., 2001
2012 Microchip Technology Inc.
DS25160A-page 1
MCP1755/1755S
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification
is not implied. Exposure to maximum rating conditions
for extended periods may affect device reliability.
Absolute Maximum Ratings †
Input Voltage, V
IN
.........................................................+17.6V
V
IN
, PWRGD, SHDN................. (GND – 0.3V) to (V
IN
+ 0.3V)
V
OUT
................................................. (GND – 0.3V) to (+5.5V)
Internal Power Dissipation ............ Internally-Limited (Note
6)
Output Short Circuit Current ................................. Continuous
Storage temperature .....................................-55°C to +150°C
Maximum Junction Temperature ....................+165°C(Note
7)
Operating Junction Temperature...................-40°C to +150°C
ESD protection on all pins
kV HBM and
400V
MM
AC/DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise specified, all limits are established for V
IN
= V
R
+ 1V,
Note 1,
I
LOAD
= 1 mA, C
OUT
= 1 µF (X7R), C
IN
= 1 µF (X7R), T
A
= +25°C, t
r(VIN)
= 0.5 V/µs, SHDN = V
IN
,
PWRGD = 10K to V
OUT
.
Boldface
type applies for junction temperatures, T
J
(Note
7)
of -40°C to +125°C.
Parameters
Input/Output Characteristics
Input Operating Voltage
Output Voltage Operating
Range
Input Quiescent Current
Input Quiescent Current
for SHDN mode
Ground Current
Maximum Output Current
Output Soft Current Limit
V
IN
V
OUT-RANGE
I
q
I
SHDN
I
GND
I
OUT_mA
SCL
3.6
1.8
—
—
—
300
—
—
—
68
0.1
300
—
450
16.0
5.5
100
4
400
—
—
V
V
µA
µA
µA
mA
mA
V
OUT
0.1V,
V
IN
= V
IN(MIN)
,
Current measured 10 ms after
the load is applied
Pulse Duration < 100 ms,
Duty Cycle < 50%,
V
OUT
0.1V,
Note 6
V
IN
= V
IN(MIN)
,
V
OUT
= GND
V
IN
= 0 to 16V,
I
LOAD
= 300 mA
I
L
= 0 mA
SHDN = GND
I
LOAD
= 300 mA
Sym.
Min.
Typ.
Max.
Units
Conditions
Output Pulse Current Limit
PCL
—
350
—
mA
Output Short Circuit
Foldback Current
Output Voltage Overshoot
on Start-up
Note 1:
2:
3:
4:
5:
6:
I
OUT_SC
V
OVER
—
—
30
0.5
—
—
mA
%V
OUT
7:
8:
The minimum V
IN
must meet two conditions: V
IN
3.6V and V
IN
V
R
+ V
DROPOUT(MAX)
.
V
R
is the nominal regulator output voltage when the input voltage V
IN
= V
Rated
+ V
DROPOUT(MAX)
or V
IN
= 3.6V (whichever is
greater); I
OUT
= 1 mA.
TCV
OUT
= (V
OUT-HIGH
– V
OUT-LOW
) x 10
6
/(V
R
x
Temperature
), V
OUT-HIGH
= highest voltage measured over the temperature
range. V
OUT-LOW
= lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
OUT
.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below the output voltage
value that was measured with an applied input voltage of V
IN
= V
R
+ 1V or V
IN
= 3.6V (whichever is greater).
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T
A
, T
J
,
JA
). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum +150°C rating. Sustained junction
temperatures above +150°C can impact the device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the desired
junction temperature. The test time is small enough such that the rise in the junction temperature over the ambient
temperature is not significant.
See
Section 4.6 “Shutdown Input (SHDN)”
and
Figure 2-34.
2012 Microchip Technology Inc.
DS25160A-page 5
Power technology
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