DMN62D0UT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
60V
R
DS(ON)
max
2Ω @ V
GS
= 4.5V
2.5Ω @ V
GS
= 2.5V
I
D
max
T
A
= +25°
C
320mA
Features
Low On-Resistance: R
DS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 1kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making
it ideal for high-efficiency power management applications.
Mechanical Data
Applications
Motor Control
Power Management Functions
SOT523
Case: SOT523
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
Matte Tin Annealed over Alloy 42
Leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.002 grams (Approximate)
D
D
G
G
Gate Protection
Diode
S
S
Top View
Equivalent Circuit
Top View
Pin Out
Configuration
Ordering Information
(Note 4)
Part Number
DMN62D0UT-7
DMN62D0UT-13
Notes:
Case
SOT523
SOT523
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
TK9 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
TK9
YM
Date Code Key
Year
Code
Month
Code
2016
D
Jan
1
Feb
2
2017
E
Mar
3
2018
F
Apr
4
May
5
2019
G
Jun
6
2020
H
Jul
7
Aug
8
2021
I
Sep
9
2022
J
Oct
O
Nov
N
2023
K
Dec
D
August 2016
© Diodes Incorporated
DMN62D0UT
Document number: DS38186 Rev. 3 - 2
1 of 7
www.diodes.com
DMN62D0UT
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Continuous Drain Current (Note 6) V
GS
= 4.5V
T
A
= +25°
C
T
A
= +70°
C
Symbol
V
DSS
V
GSS
I
D
I
S
I
DM
Value
60
±20
320
260
0.4
1.2
Units
V
V
mA
A
A
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Steady State
Steady State
Symbol
P
D
R
θJA
P
D
R
θJA
T
J,
T
STG
Value
230
546
340
377
-55 to +150
Units
mW
°
C/W
mW
°
C/W
°
C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
(@T
A
= +25° unless otherwise specified.)
C
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
Min
60
—
—
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
1.2
1.4
1.8
1.8
0.8
32
3.9
2.4
101
0.5
0.09
0.09
2.4
2.5
22.6
12.5
Max
—
1.0
±10
1.0
2.0
2.5
3.0
—
1.3
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
µA
V
Ω
S
V
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= 10µA
V
DS
= 60V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= 10V, I
D
= 250µA
V
GS
= 4.5V, I
D
= 0.1A
V
GS
= 2.5V, I
D
= 0.05A
V
GS
= 1.8V, I
D
= 0.05A
V
DS
=10V, I
D
= 0.2A
V
GS
= 0V, I
S
= 115mA
V
DS
= 30V, V
GS
= 0V
f = 1.0MHz
f = 1MHz , V
GS
= 0V, V
DS
= 0V
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
Forward Transconductance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
V
DD
= 30V, V
GS
= 10V,
R
G
= 25Ω, I
D
= 200mA
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN62D0UT
Document number: DS38186 Rev. 3 - 2
2 of 7
www.diodes.com
August 2016
© Diodes Incorporated
DMN62D0UT
1.0
V
DS
=5V
0.8
V
GS
=2.5V
V
GS
=3.0V
V
GS
=4.5V
0.6
V
GS
=1.8V
V
GS
=2.0V
I
D
, DRAIN CURRENT (A)
0.6
0.8
V
DS
=5V
I
D
, DRAIN CURRENT (A)
0.4
0.4
0.2
T
A
=125℃
T
A
=150℃
0.2
T
A
=85℃
T
A
=25℃
T
A
=-55℃
V
GS
=1.5V
V
GS
=1.3V
0.0
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
3
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(Ω)
5
0
0.5
1
1.5
2
2.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
3
2.5
2.5
2
V
GS
=2.5V
1.5
V
GS
=4.5V
1
2
1.5
I
D
=100mA
0.5
0
0
0.2
0.4
0.6
0.8
1
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
1
0
5
10
15
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
20
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
0.2
0.4
0.6
0.8
1
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
T
A
=-55℃
T
A
=25℃
V
GS
= 4.5V
T
A
=125℃
T
A
=85℃
T
A
=150℃
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
2.2
2
1.8
1.6
1.4
1.2
V
GS
=2.5V, I
D
=50mA
1
0.8
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Junction
Temperature
August 2016
© Diodes Incorporated
V
GS
=4.5V, I
D
=100mA
DMN62D0UT
Document number: DS38186 Rev. 3 - 2
3 of 7
www.diodes.com
DMN62D0UT
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
3.5
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
3
2.5
2
1.5
1
0.5
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
100
f=1MHz
C
T,
JUNCTION CAPACITANCE (pF)
I
S
, SOURCE CURRENT (A)
0.8
V
GS
=0V, T
A
=85℃
0.6
V
GS
=0V, T
A
=125℃
V
GS
=0V, T
A
=150℃
0.4
C
iss
V
GS
=4.5V, I
D
=100mA
V
GS
=2.5V, I
D
=50mA
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
I
D
=250μA
I
D
=1mA
1
10
C
oss
C
rss
0.2
V
GS
=0V, T
A
=25℃
V
GS
=0V, T
A
=-55℃
0
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1.5
1
0
5
10
15
20
25
30
35
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
40
4.5
4
3.5
3
I
D
, DRAIN CURRENT (A)
10
R
DS(ON)
Limited
P
W
=1ms
1
P
W
=100μs
V
GS
(V)
2.5
2
1.5
1
0.5
0
0
0.1
0.3
Q
g
(nC)
Figure 11. Gate Charge
0.2
0.4
0.5
V
DS
=10V, I
D
=250mA
0.1
P
W
=10ms
P
W
=100ms
0.01
T
J(MAX)
=150℃
P
W
=1s
T
A
=25℃
Single Pulse
P
W
=10s
DUT on 1*MRP Board
DC
V
GS
=4.5V
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
0.001
DMN62D0UT
Document number: DS38186 Rev. 3 - 2
4 of 7
www.diodes.com
August 2016
© Diodes Incorporated
DMN62D0UT
1
r(t), TRANSIENT THERMAL RESISTANCE
D=0.5
D=0.3
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
D=Single Pulse
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
10
100
1000
R
θJA
(t)=r(t) * R
θJA
R
θJA
=549℃/W
Duty Cycle, D=t1 / t2
D=0.9
D=0.7
DMN62D0UT
Document number: DS38186 Rev. 3 - 2
5 of 7
www.diodes.com
August 2016
© Diodes Incorporated
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