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HMC356LP3

Description
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 350 - 550 MHz
CategoryWireless rf/communication    Radio frequency and microwave   
File Size379KB,6 Pages
ManufacturerHittite Microwave(ADI)
Websitehttp://www.hittite.com/
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HMC356LP3 Overview

GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 350 - 550 MHz

HMC356LP3 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerHittite Microwave(ADI)
package instructionLCC16,.12SQ,20
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOW NOISE
Characteristic impedance50 Ω
structureCOMPONENT
Gain15 dB
Maximum input power (CW)15 dBm
JESD-609 codee0
Installation featuresSURFACE MOUNT
Number of functions1
Number of terminals16
Maximum operating frequency550 MHz
Minimum operating frequency350 MHz
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Encapsulate equivalent codeLCC16,.12SQ,20
power supply5 V
RF/Microwave Device TypesWIDE BAND LOW POWER
surface mountYES
technologyGAAS
Terminal surfaceTin/Lead (Sn/Pb)
HMC356LP3
/
356LP3E
v02.0605
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 350 - 550 MHz
5
AMPLIFIERS - SMT
Typical Applications
The HMC356LP3 / HMC356LP3E is ideal for
basestation receivers:
• GSM 450 & GSM 480
• CDMA 450
• Private Land Mobile Radio
Features
Noise Figure: ≤1.0 dB
+38 dBm Output IP3
Gain: 17 dB
Very Stable Gain vs. Supply & Temperature
Single Supply: +5.0V @ 104 mA
50 Ohm Matched Output
Functional Diagram
General Description
The HMC356LP3 & HMC356LP3E are high dynamic
range GaAs PHEMT MMIC Low Noise Amplifiers
is ideal for GSM & CDMA cellular basestation and
Mobile Radio front-end receivers operating between
350 and 550 MHz. This LNA has been optimized to
provide 1.0 dB noise figure, 17 dB gain and +38 dBm
output IP3 from a single supply of +5.0V @ 104 mA.
Input and output return losses are 15 dB typical, with
the LNA requiring only four external components to
optimize the RF input match, RF ground and DC bias.
The HMC356LP3 & HMC356LP3E share the same
package and pinout with the HMC372LP3 high IP3
LNA. A low cost, leadless 3x3 mm (LP3) SMT QFN
package houses the low noise amplifier.
Electrical Specifications,
T
A
= +25° C, Vs = +5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone, 1 MHz tone spacing)
Supply Current (Idd)
34
17
15
Min.
Typ.
350 - 550
17
0.0032
1.0
17
12
24
21
22.5
38
104
0.010
1.4
Max.
Units
MHz
dB
dB / °C
dB
dB
dB
dB
dBm
dBm
dBm
mA
5 - 90
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com

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Description GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 350 - 550 MHz GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 350 - 550 MHz GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 350 - 550 MHz
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