DMP4047SK3
40V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
R
DS(ON)
45mΩ @ V
GS
= -10V
-40V
55mΩ @ V
GS
= -4.5V
-18A
I
D
T
C
= +25°
C
-20A
Features
100% Unclamped Inductive Switch (UIS) Test in Production
Low On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
NEW PRODUCT
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.33 grams (Approximate)
Applications
Backlighting
DC-DC Converters
Power Management Functions
D
TO252 (DPAK)
D
G
D
G
Top View
S
Top View
Pin-Out
S
Equivalent Circuit
Ordering Information
(Note 4)
Product
DMP4047SK3-13
Notes:
Case
TO252 (DPAK)
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
P4047S
YYWW
= Manufacturer’s Marking
P4047S = Product Type Marking Code
.
YYWW = Date Code Marking
YY = Year (ex: 17= 2017)
WW = Week (01 to 53)
DMP4047SK3
Document Number DS37317 Rev. 2 - 2
1 of 7
www.diodes.com
September 2017
© Diodes Incorporated
DMP4047SK3
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) V
GS
= -10V
Maximum Body Diode Continuous Current
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
Avalanche Energy (Note 7) L = 0.1mH
Steady
State
T
C
= +25°
C
T
C
= +100°
C
Symbol
V
DSS
V
GSS
I
D
I
S
I
DM
I
AS
E
AS
Value
-40
±20
-20
-12.7
-2.5
-40
-18
16
Unit
V
V
A
A
A
A
mJ
NEW PRODUCT
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T
A
= +25°
C
T
A
= +70°
C
Steady state
t<10s
T
A
= +25°
C
T
A
= +70°
C
Steady state
t<10s
Symbol
P
D
R
θJA
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
1.6
1.0
77
34
2.7
1.7
47
30
4.8
-55 to +150
Unit
W
°
C/W
W
°
C/W
°
C
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
-40
-1.0
Typ
33
40
-0.75
1328
103
81
7.7
11.2
23.2
3.3
3.9
18.5
28.2
38.8
28.6
15.4
5.4
Max
-1
±100
-3.0
45
55
-1.2
Unit
V
µA
nA
V
mΩ
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Test Condition
V
GS
= 0V, I
D
= -250μA
V
DS
= -40V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -10V, I
D
= -4.4A
V
GS
= -4.5V, I
D
= -3.7A
V
GS
= 0V, I
S
= -3.9A
V
DS
= -20V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= -20V, I
D
= -4.9A
Characteristic
OFF CHARACTERISTICS
(Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°
C
Gate-Source Leakage
ON CHARACTERISTICS
(Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
V
DS
= -20V, I
D
= -3.9A
V
GS
= -4.5V, R
G
= 1Ω
I
F
= -3.9A, di/dt = 100A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°
C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMP4047SK3
Document Number DS37317 Rev. 2 - 2
2 of 7
www.diodes.com
September 2017
© Diodes Incorporated
DMP4047SK3
30.0
25.0
-I
D
, DRAIN CURRENT (A)
20.0
15.0
10.0
5.0
V
GS
=-2.0V
0.0
0
0.5
1
1.5
2
2.5
3
3.5
4
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1.Typical Output Characteristic
4.5
5
0
0
1
2
3
4
-V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2.Typical Transfer Characteristic
5
V
GS
=-4.0V
V
GS
=-4.5V
V
GS
=-5.0V
V
GS
=-3.0V
V
GS
=-3.5V
-I
D
, DRAIN CURRENT (A)
30
25
20
15
10
125℃
5
150℃
25℃
V
DS
= -5.0V
-55℃
85℃
V
GS
=-10.0V
V
GS
=-2.5V
NEW PRODUCT
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(Ω)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(Ω)
0.15
0.2
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
4
6
8
10 12 14 16 18 20
-V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical On-Resistance vs. Gate Voltage
2
I
D
= -4.4A
I
D
= -3.7A
0.12
V
GS
=-2.5V
0.09
0.06
V
GS
=-4.5V
0.03
V
GS
=-10.0V
0
0
4
6
8
10 12 14 16 18 20
-I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3.Typical On-Resistance vs. Drain Current and
Gate Voltage
2
R
DS(ON),
DRAIN-SOURCE ON-RESISTANCE
(Ω)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
0.1
V
GS
= -4.5V
0.08
125℃
0.06
150℃
1.6
V
GS
= -10.0V,
I
D
=-10.0A
1.4
1.2
V
GS
= -4.5V,
I
D
=-5.0A
1
0.04
85℃
0.02
25℃
-55℃
0.8
0
0
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
Figure 5.Typical On-Resistance vs. Drain Current and
Temperature
5
0.6
-50
-25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
DMP4047SK3
Document Number DS37317 Rev. 2 - 2
3 of 7
www.diodes.com
September 2017
© Diodes Incorporated
DMP4047SK3
R
DS(ON),
DRAIN-SOURCE ON-RESISTANCE
(Ω)
-V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
0.08
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
10000
150℃
-I
DSS
, LEAKAGE CURRENT (nA)
-I
S
, SOURCE CURRENT(A)
25
20
15
10
5
0
0
V
GS
=0V,
T
A
=-55℃
0.3
0.6
0.9
1.2
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1.5
V
GS
=0V,
T
A
=150℃
V
GS
=0V,
T
A
=85℃
V
GS
=0V,
T
A
=25℃
1000
125℃
100
85℃
10
25℃
I
D
=-250μA
I
D
=-1mA
0.06
V
GS
=-4.5V, I
D
=-5.0A
0.04
NEW PRODUCT
0.02
V
GS
=-10.0V, I
D
=-10.0A
0
-50
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
-25
30
V
GS
=0V,
T
A
=125℃
1
0.1
0
2 3 4 5 6 7 8 9 10 11 12
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10.Typical Drain-Source Leakage Current vs.
Voltage
1
10
f=1MHz
C
T
, JUNCTION CAPACITANCE (pF)
C
iss
V
GS,
GATE-SOURCE VOLTAGE (V)
8
1000
C
oss
6
4
V
DS
=-20V, I
D
=-4.9A
2
C
rss
10
0
2
4
6
8
10
12
14
16
18
20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 11.Typical Junction Capacitance
0
0
5
10
15
20
25
Qg, TOTAL GATE CHARGE (nC)
Figure 12.Gate Charge
DMP4047SK3
Document Number DS37317 Rev. 2 - 2
4 of 7
www.diodes.com
September 2017
© Diodes Incorporated
DMP4047SK3
100
R
DS(ON)
Limited
P
W
=10μs
I
D
, DRAIN CURRENT (A)
10
P
W
=1ms
P
W
=10ms
1
P
W
=100ms
P
W
=100μs
P
W
=1μs
NEW PRODUCT
P
W
=1s
0.1
T
J (Max)
=150℃
T
C
=25℃
Single Pulse
DUT on Infinite Heatsink
V
GS
=-10V
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 13. SOA, Safe Operation Area
100
0.01
10
r (t), TRANSIENT THERMAL RESISTANCE
1
D=0.9
D=0.3
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
D=Single Pulse
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 14. Transient Thermal Resistance
R
θJC
(t)=r(t) * R
θJC
R
θJC
=3.7℃/W
Duty Cycle, D=t1 / t2
D=0.7
D=0.5
DMP4047SK3
Document Number DS37317 Rev. 2 - 2
5 of 7
www.diodes.com
September 2017
© Diodes Incorporated
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