KSC1008 NPN Epitacial Silicon Transistor
September 2006
KSC1008
NPN Epitacial Silicon Transistor
Features
• Low frequency amplifier medium speed switching.
• High Collector-Base Voltage : V
CBO
=80V.
• Collector Current : I
C
=700mA
• Collector Power Dissipation : P
C
=800mW
• Suffix “-C” means Center Collector (1.Emitter 2.Collector 3.Base)
• Non suffix “-C” means Side Collector (1.Emitter 2.Base 3.Collector)
• Complement to KSA708
KSC1008
1 2 3
tm
TO-92
: 1. Emitter 2. Base
3. Collector
KSC1008C : 1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings *
T
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector current
Collector Power Dissipation
Junction Temperature
Storage Temperature
a
= 25°C unless otherwise noted
Parameter
Value
80
60
8
700
800
+150
-55 ~ +150
Units
V
V
V
mA
mW
°C
°C
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics *
T
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
a
= 25°C unless otherwise noted
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
=100µA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=2V, I
C
=50mA
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
V
CE
=10V, I
C
=50mA
V
CB
=10V, I
E
=0, f=1MHz
Min.
80
60
8
Typ.
Max.
Units
V
V
V
0.1
0.1
40
0.2
0.86
30
50
8
400
0.4
1.1
µA
µA
V
V
MHz
pF
* DC Item are tested by Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
h
FE
Classification
Classification
h
FE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
G
200 ~ 400
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
KSC1008 Rev. B
KSC1008 NPN Epitacial Silicon Transistor
Package Marking and Ordering Information
Device
(note)
KSC1008COBU
KSC1008COTA
KSC1008CYBU
KSC1008CYTA
KSC1008GBU
KSC1008GTA
KSC1008OBU
KSC1008OTA
KSC1008RBU
KSC1008RTA
KSC1008YBU
KSC1008YTA
KSC1008YTF
Device Marking
C1008OC
C1008OC
C1008YC
C1008YC
C1008G
C1008G
C1008O
C1008O
C1008R
C1008R
C1008Y
C1008Y
C1008Y
Package
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
Packing Method
BULK
TAPE & AMMO
BULK
TAPE & AMMO
BULK
TAPE & AMMO
BULK
TAPE & AMMO
BULK
TAPE & AMMO
BULK
TAPE & AMMO
TAPE & REEL
Qty(pcs)
--
2,000
--
2,000
--
2,000
--
2,000
--
2,000
--
2,000
2,000
Pin Definitions
1.Emitter 2.Collector 3.Base
1.Emitter 2.Collector 3.Base
1.Emitter 2.Collector 3.Base
1.Emitter 2.Collector 3.Base
1.Emitter 2.Base 3.Collector
1.Emitter 2.Base 3.Collector
1.Emitter 2.Base 3.Collector
1.Emitter 2.Base 3.Collector
1.Emitter 2.Base 3.Collector
1.Emitter 2.Base 3.Collector
1.Emitter 2.Base 3.Collector
1.Emitter 2.Base 3.Collector
1.Emitter 2.Base 3.Collector
Note : Affix “-C-” - center collector pin.
Affix “-R-, -O-, -Y-, -G-” - h
HE
classification
Suffix “-BU” - Bulk packing, straight lead form.(see package dimensions)
Suffix “-TF” - Tape& Reel packing, 0.200 In-Line Spacing lead form. (see package dimensions)
SUffix “-TA” - Tape& AMMO packing, 0.200 In-Line Spacing lead form. (see package dimensions)
2
KSC1008 Rev. B
www.fairchildsemi.com
KSC1008 NPN Epitacial Silicon Transistor
Typical Characteristics
200
240
I
B
= 1.8mA
180
I
B
= 1.6mA
I
B
= 1.4mA
220
200
V
CE
= 2V
I
C
[mA], COLLECTOR CURRENT
160
140
h
FE
, DC CURRENT GAIN
180
160
140
120
100
80
60
40
I
B
= 1.2mA
120
I
B
= 1.0mA
100
I
B
= 0.8mA
80
60
40
20
0
0
5
10
15
20
25
30
35
40
45
50
I
B
= 0.6mA
I
B
= 0.4mA
I
B
= 0.2mA
20
0
1
10
100
1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10
1000
I
C
=10I
B
V
CE
=2V
1
I
C
[mA], COLLECTOR CURRENT
100
1000
100
V
BE
(sat)
0.1
10
V
CE
(sat)
0.01
1
10
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
100
f=1MHz
I
E
=0
C
ob
[pF],CAPACTIANCE
10
1
1
10
100
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
3
KSC1008 Rev. B
www.fairchildsemi.com
KSC1008 NPN Epitacial Silicon Transistor
Package Dimensions
TO-92 Straight Lead Form
4.58
–0.15
+0.25
14.47
±0.40
0.46
±0.10
4.58
±0.20
1.27TYP
[1.27
±0.20
]
3.60
±0.20
3.86MAX
1.27TYP
[1.27
±0.20
]
0.38
–0.05
+0.10
1.02
±0.10
0.38
–0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
Dimensions in Millime
TO-92 0.200 In-Line Spacing Lead Form
Dimensions in Inches[Millimeters]
4
KSC1008 Rev. B
www.fairchildsemi.com
KSC1008 NPN Epitacial Silicon Transistor
KSC1008 NPN Epitacial Silicon Transistor
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
ACEx™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
FAST
®
FASTr™
FPS™
FRFET™
FACT Quiet Series™
GlobalOptoisolator™
GTO™
HiSeC™
I
2
C™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
Across the board. Around the world.™
The Power Franchise
®
Programmable Active Droop™
OCX™
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench
®
QFET
®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
ScalarPump™
SILENT SWITCHER
®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyBoost™
TinyBuck™
TinyPWM™
TinyPower™
TinyLogic
®
TINYOPTO™
TruTranslation™
UHC™
UltraFET
®
UniFET™
VCX™
Wire™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPE-
CIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body, or (b) support or sustain life, or
(c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably expected
to result in significant injury to the user.
2. A critical component is any component of a life support device or system
whose failure to perform can be reasonably expected to cause the failure
of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
5
KSC1008 Rev. B
www.fairchildsemi.com
京公网安备 11010802033920号
EEWORLD
