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ZXT12P20DXTC

Description
Bipolar Transistors - BJT Dual 20V PNP
CategoryDiscrete semiconductor    The transistor   
File Size254KB,6 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
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ZXT12P20DXTC Overview

Bipolar Transistors - BJT Dual 20V PNP

ZXT12P20DXTC Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTSSOP
package instructionSMALL OUTLINE, S-PDSO-G8
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)2.5 A
Collector-emitter maximum voltage20 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)50
JEDEC-95 codeMO-187AA
JESD-30 codeS-PDSO-G8
Number of components2
Number of terminals8
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power dissipation(Abs)1.25 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)110 MHz
Base Number Matches1
ZXT12P20DX
SuperSOT4™
DUAL 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
V
CEO
=-20V; R
SAT
= 64m ; I
C
= -2.5A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
MSOP8
FEATURES
Extremely Low Equivalent On Resistance
Extremely Low Saturation Voltage
h
FE
characterised up to 5A
I
C
=2.5A Continuous Collector Current
MSOP8 package
C1
C2
B1
B2
APPLICATIONS
DC - DC Converters
Power Management Functions
Power switches
Motor control
7
B1
E1
E2
ORDERING INFORMATION
DEVICE
ZXT12P20DXTA
ZXT12P20DXTC
DEVICE MARKING
T12P20DX
REEL SIZE
(inches)
7
13
TAPE WIDTH
(mm)
12mm embossed
12mm embossed
1
E1
C1
C1
C2
C2
QUANTITY
PER REEL
1000 units
E2
B2
3
2
Top View
4000 units
ISSUE 1 - MARCH 2000
1
4
5
6
8

ZXT12P20DXTC Related Products

ZXT12P20DXTC ZXT12P20DXTA
Description Bipolar Transistors - BJT Dual 20V PNP Bipolar Transistors - BJT Dual 20V PNP
Is it Rohs certified? conform to conform to
Parts packaging code TSSOP TSSOP
package instruction SMALL OUTLINE, S-PDSO-G8 SMALL OUTLINE, S-PDSO-G8
Contacts 8 8
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Maximum collector current (IC) 2.5 A 2.5 A
Collector-emitter maximum voltage 20 V 20 V
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE) 50 50
JEDEC-95 code MO-187AA MO-187AA
JESD-30 code S-PDSO-G8 S-PDSO-G8
Number of components 2 2
Number of terminals 8 8
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape SQUARE SQUARE
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 1.25 W 1.25 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 110 MHz 110 MHz
Base Number Matches 1 1
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