DMP3037LSS
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
-30V
R
DS(on) max
32mΩ @ V
GS
= -10V
50mΩ @ V
GS
= -4.5V
I
D
T
C
= +25°C
-5.8A
-4.6A
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
NEW PRODUCT
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.072 grams (approximate)
Applications
DC-DC Converters
Power management functions
Backlighting
SO-8
S
S
S
G
D
D
D
D
Top View
Pin-Out
D
G
S
Equivalent Circuit
Top View
Ordering Information
(Note 4)
Part Number
DMP3037LSS-13
Notes:
Case
SO-8
Packaging
2500 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
8
5
P3037LS
YY WW
1
4
1
P3037LS
YY WW
4
= Manufacturer’s Marking
P3037LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Chengdu A/T Site
Shanghai A/T Site
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© Diodes Incorporated
DMP3037LSS
Document number: DS36775 Rev. 2 - 2
DMP3037LSS
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) V
GS
= -10V
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Notes 7) L = 0.1mH
Avalanche Energy (Notes 7) L = 0.1mH
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
DM
I
AS
E
AS
Value
-30
±20
-5.8
-4.6
-40
-17
15
Unit
V
V
A
A
A
mJ
NEW PRODUCT
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T
A
= +25°C
T
A
= +70°C
Steady state
t<10s
T
A
= +25°C
T
A
= +70°C
Steady state
t<10s
Symbol
P
D
R
θJA
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
1.2
0.8
100
58
1.6
1.0
77
45
10
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= -10V)
Total Gate Charge (V
GS
= -4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
trr
Qrr
Min
-30
—
—
-1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
19
28
-0.75
931
120
102
23
19.3
9.7
2.5
3.6
3.2
11.5
55.8
30.8
13.6
3.4
Max
—
-1.0
±100
-2.4
32
50
-1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
μA
nA
V
mΩ
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
nS
nC
Test Condition
V
GS
= 0V, I
D
= -250μA
V
DS
= -30V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -10V, I
D
= -7A
V
GS
= -4.5V, I
D
= -5A
V
GS
= 0V, I
S
= -1A
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= -15V, I
D
= -7A
V
DS
= -15V, I
D
= -7A
V
DS
= -15V, V
GS
= -10V,
R
L
= 2.15Ω, R
GEN
= 3Ω,
IS = -7A, dI/dt = 100A/μs
IS = -7A, dI/dt = 100A/μs
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
J
= 25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMP3037LSS
Document number: DS36775 Rev. 2 - 2
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April 2014
© Diodes Incorporated
DMP3037LSS
20.0
V
GS
= -10V
20
V
GS
= -3.0V
V
DS
= -5.0V
18.0
16.0
-I
D
, DRAIN CURRENT (A)
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
V
GS
= -4.5V
V
GS
= -4.0V
V
GS
= -3.5V
18
16
-I
D
, DRAIN CURRENT (A)
14
12
10
8
6
4
2
T
A
= 150
C
T
A
= 125
C
T
A
= 85
C
T
A
= 25
C
T
A
= -55
C
NEW PRODUCT
V
GS
= -2.5V
V
GS
= -2.0V
0
1
2
3
4
-V
DS
, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
5
0
1
1.5
2
2.5
3
3.5
-V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
0
2
4
6
8 10 12 14 16 18
-I
D
, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
20
V
GS
= -10V
V
GS
= -4.5V
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
I
D
= -5.0A
I
D
= -7.0A
0
2
6
8 10 12 14 16 18
-V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
4
20
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
0
V
GS
= -10V
1.6
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
V
GS
= -4.5V
I
D
= -5.0A
T
A
= 150
C
T
A
= 125
C
T
A
= 85
C
T
A
= 25
C
T
A
= -55
C
1.4
1.2
V
GS
= -10V
I
D
= -12A
1
0.8
2
4
6
8 10 12 14 16 18
-I
D
, DRAIN SOURCE CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
20
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
DMP3037LSS
Document number: DS36775 Rev. 2 - 2
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April 2014
© Diodes Incorporated
DMP3037LSS
R
DS(on)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.05
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
2
0.045
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with Temperature
V
GS
= -10V
I
D
= -7A
V
GS
= -4.5V
I
D
= -5A
1.8
1.6
I
D
= -1mA
1.4
I
D
= -250µA
1.2
NEW PRODUCT
1
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
10000
f = 1MHz
0.8
-50
20
18
-I
S
, SOURCE CURRENT (A)
16
14
12
10
8
6
4
2
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
1.6
T
A
= 150
C
T
A
= 125
C
T
A
= 85
C
T
A
= 25
C
T
A
= -55
C
C
T
, JUNCTION CAPACITANCE (pF)
1000
C
iss
C
oss
100
C
rss
10
0
5
10
15
20
25
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
30
10
100
R
DS(on)
Limited
-V
GS
, GATE-SOURCE VOLTAGE (V)
8
6
V
DS
= -15V
I
D
= -7A
-I
D
, DRAIN CURRENT (A)
10
1
DC
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
P
W
= 100µs
4
2
0.1
T
J(max)
= 150°C
0
0
2
4
6
8 10 12 14 16 18
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
20
T
A
= 25°C
V
GS
= -8V
Single Pulse
0.01
DUT on 1 * MRP Board
0.1
1
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
DMP3037LSS
Document number: DS36775 Rev. 2 - 2
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© Diodes Incorporated
DMP3037LSS
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.9
D = 0.02
0.01
D = 0.01
D = 0.005
NEW PRODUCT
Single Pulse
R
JA
(t) = r(t) * R
JA
R
JA
= 100°C/W
Duty Cycle, D = t1/ t2
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIMES (sec)
Figure 13 Transient Thermal Resistance
100
1000
0.001
0.00001
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
E1 E
A1
L
Gauge Plane
Seating Plane
Detail ‘A’
h
A2 A A3
e
D
b
7
°~
9
°
45
°
Detail ‘A’
SO-8
Dim
Min
Max
A
-
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
-
0.35
L
0.62
0.82
0
8
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
0.254
C1
C2
Y
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
DMP3037LSS
Document number: DS36775 Rev. 2 - 2
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April 2014
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