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BSP716N H6327

Description
MOSFET SMALL SIGNAL+P-CH
Categorysemiconductor    Discrete semiconductor   
File Size567KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BSP716N H6327 Overview

MOSFET SMALL SIGNAL+P-CH

BSP716N H6327 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryMOSFET
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-223-4
Number of Channels1 Channel
Transistor PolarityP-Channel
ConfigurationSingle
Height1.6 mm
Length6.5 mm
Transistor Type1 P-Channel
Width3.5 mm
BSP716N
OptiMOS
Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic Level (4.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
PG-SOT223
I
D
Product Summary
V
DS
R
DS(on),max
V
GS
=10 V
V
GS
=4.5 V
75
0.16
0.18
2.3
A
V
W
75.2
Type
BSP716N
Package
SOT223
Tape and Reel
H6327: 1000 pcs/ reel
Marking
BSP716N
Halogen-Free
Yes
Packing
Non dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
Avalanche energy, single pulse
I
D,pulse
E
AS
T
A
=25 °C
I
D
=2.3 A,
R
GS
=25
W
I
D
=2.3 A,
V
DS
=80 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
2.3
1.8
9.2
33
mJ
Unit
A
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
Power dissipation
Operating and storage temperature
ESD Class
Soldering Temperature
IEC climatic category; DIN IEC 68-1
V
GS
P
tot
T
j
,
T
stg
JESD22-A114 -HBM
T
A
=25 °C
±20
1.8
-55 ... 150
0 (<250V)
260 °C
55/150/56
V
W
°C
Rev 2.0
page 1
2013-04-04
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