FDS3672
April 2012
FDS3672
N-Channel PowerTrench
®
MOSFET
100V, 7.5A, 22mΩ
Features
• r
DS(ON)
= 19mΩ (Typ.), V
GS
= 10V, I
D
= 7.5A
• Q
g
(tot) = 28nC (Typ.), V
GS
= 10V
• Low Miller Charge
• Low Q
RR
Body Diode
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
Formerly developmental type 82763
Branding Dash
5
5
4
3
2
1
6
7
1
2
3
4
8
SO-8
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
I
D
Continuous (T
A
= 25
o
C, V
GS
= 10V, R
θJA
= 50
o
C/W)
Continuous (T
A
= 100
o
C, V
GS
= 10V, R
θJA
= 50
o
C/W)
Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Parameter
Ratings
100
±20
7.5
4.8
Figure 4
416
2.5
20
-55 to 150
Units
V
V
A
A
A
mJ
W
mW/
o
C
o
Operating and Storage Temperature
C
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction to Ambient at 10 seconds (Note 3)
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
Thermal Resistance, Junction to Case (Note 2)
50
85
25
o
C/W
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
FDS3672
Device
FDS3672
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
©2012 Fairchild Semiconductor Corporation
FDS3672 Rev. C2
FDS3672
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250µA, V
GS
= 0V
V
DS
= 80V
V
GS
= 0V
V
GS
=
±20V
T
C
=
150
o
C
100
-
-
-
-
-
-
-
-
1
250
±100
V
µA
nA
On Characteristics
V
GS(TH)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250µA
I
D
= 7.5A, V
GS
= 10V
r
DS(ON)
Drain to Source On Resistance
I
D
= 6.8A, V
GS
= 6V
I
D
= 7.5A, V
GS
= 10V,
T
C
= 150
o
C
2
-
-
-
-
0.019
0.023
0.035
4
0.023
0.028
0.043
Ω
V
Dynamic Characteristics
C
ISS
C
OSS
C
RSS
Q
g(TOT)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 50V
I
D
= 7.5A
I
g
= 1.0mA
-
-
-
-
-
-
-
-
2015
285
70
28
4
10
6.8
6
-
-
-
37
6
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
Switching Characteristics
(V
GS
= 10V)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V
DD
= 50V, I
D
= 4A
V
GS
= 10V, R
GS
= 10Ω
-
-
-
-
-
-
-
14
20
37
27
-
51
-
-
-
-
96
ns
ns
ns
ns
ns
ns
Drain-Source Diode Characteristics
V
SD
t
rr
Q
RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
I
SD
= 7.5A
I
SD
= 4A
I
SD
= 7.5A, dI
SD
/dt= 100A/µs
I
SD
= 7.5A, dI
SD
/dt= 100A/µs
-
-
-
-
-
-
-
-
1.25
1.0
55
90
V
V
ns
nC
Notes:
1:
Starting T
J
= 25°C, L = 13mH, I
AS
= 8A.
2:
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user’s board design.
3:
R
θJA
is measured with 1.0 in
2
copper on FR-4 board
©2012 Fairchild Semiconductor Corporation
FDS3672 Rev. C2
FDS3672
Typical Characteristics
T
A
= 25°C unless otherwise noted
1.2
POWER DISSIPATION MULTIPLIER
8
V
GS
= 10V
1.0
I
D
, DRAIN CURRENT (A)
0
25
50
75
100
125
150
6
0.8
0.6
4
0.4
2
0.2
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
o
C)
T
C
, CASE TEMPERATURE (
o
C)
0
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
2
1
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Z
θJA
, NORMALIZED
THERMAL IMPEDANCE
0.1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
R
θJA
=50
o
C/W
0.01
SINGLE PULSE
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJA
x R
θJA
+ T
A
0.001
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t , RECTANGULAR PULSE DURATION (s)
10
1
10
2
10
3
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
I
DM
, PEAK CURRENT (A)
T
A
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
150 - T
C
125
V
GS
= 10V
100
10
5
10
-5
10
-4
10
-3
10
-2
10
-1
t , PULSE WIDTH (s)
10
0
10
1
10
2
10
3
Figure 4. Peak Current Capability
©2012 Fairchild Semiconductor Corporation
FDS3672 Rev. C2
FDS3672
Typical Characteristics
T
A
= 25°C unless otherwise noted
300
100
10µs
10
I
AS
, AVALANCHE CURRENT (A)
8
6
T
J
= 25
o
C
I
D
, DRAIN CURRENT (A)
100µs
10
4
T
J
= 100
o
C
1
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
o
C
10ms
100ms
2
0.1
T
J
= 125
o
C
1s
300
0.01
0.1
1.0
10.0
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
0.1
1
10
100
t
AV
, TIME IN AVALANCHE (ms)
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
I
D
, DRAIN CURRENT (A)
30
V
GS
= 10V
V
GS
= 6V
V
GS
= 5V
I
D
, DRAIN CURRENT (A)
20
T
J
=
150
o
C
20
10
T
J
= 25
o
C
10
T
A
= 25
o
C
V
GS
= 4.5V
T
J
= -55
o
C
0
2.5
3.0
3.5
4.0
4.5
5.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
5.5
0
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2.0
Figure 7. Transfer Characteristics
24
DRAIN TO SOURCE ON RESISTANCE (m
Ω)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 6V
22
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
Figure 8. Saturation Characteristics
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.5
20
V
GS
= 10V
1.0
V
GS
= 10V, I
D
= 7.5A
18
0
2
4
I
D
, DRAIN CURRENT (A)
6
8
0.5
-80
-40
0
40
80
120
T
J
, JUNCTION TEMPERATURE (
o
C)
160
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
©2012 Fairchild Semiconductor Corporation
FDS3672 Rev. C2
FDS3672
Typical Characteristics
T
A
= 25°C unless otherwise noted
1.4
V
GS
= V
DS
, I
D
= 250µA
1.2
NORMALIZED GATE
THRESHOLD VOLTAGE
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
1.10
I
D
= 250µA
1.05
1.0
1.00
0.8
0.95
0.6
0.4
-80
-40
0
40
80
120
T
J
, JUNCTION TEMPERATURE (
o
C)
160
0.90
-80
-40
0
40
80
120
T
J
, JUNCTION TEMPERATURE (
o
C)
160
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
5000
C
ISS
=
C
GS
+ C
GD
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DD
= 50V
8
1000
C, CAPACITANCE (pF)
C
OSS
≅
C
DS
+ C
GD
6
C
RSS
=
C
GD
100
4
2
V
GS
= 0V, f = 1MHz
10
0.1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 7.5A
I
D
= 4A
0
5
10
15
20
Q
g
, GATE CHARGE (nC)
25
30
0
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
©2012 Fairchild Semiconductor Corporation
FDS3672 Rev. C2
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