EEWORLDEEWORLDEEWORLD

Part Number

Search

T830N18TOF

Description
SCRs Phse Cntrl Thyristrs 830A 1800V
CategoryAnalog mixed-signal IC    Trigger device   
File Size240KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

T830N18TOF Online Shopping

Suppliers Part Number Price MOQ In stock  
T830N18TOF - - View Buy Now

T830N18TOF Overview

SCRs Phse Cntrl Thyristrs 830A 1800V

T830N18TOF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionDISK BUTTON, O-XXDB-X3
Reach Compliance Codecompliant
Nominal circuit commutation break time250 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current250 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current300 mA
JESD-30 codeO-XXDB-X3
Maximum leakage current80 mA
On-state non-repetitive peak current14500 A
Number of components1
Number of terminals3
Maximum on-state current826000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialUNSPECIFIED
Package shapeROUND
Package formDISK BUTTON
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current1880 A
Off-state repetitive peak voltage1800 V
Repeated peak reverse voltage1800 V
surface mountYES
Terminal formUNSPECIFIED
Terminal locationUNSPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T830N
= -40°C... T
Elektrische
T
Eigenschaften
vj
vj max
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung T
vj
= -40°C... T
vj max
enndaten
repetitive peak forward off-state and reverse voltages
Vorwärts-Stossspitzensperrspannung
non-repetitive peak forward off-state voltage
Rückwärts-Stossspitzensperrspannung
non-repetitive peak reverse voltage
Durchlassstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Dauergrenzstrom
average on-state current
Durchlaßstrom-Effektivwert
RMS on-state current
Stossstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
Charakteristische Werte / Characteristic values
Durchlassspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlasskennlinie
200 A
i
T
4100 A
on-state characteristic
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
DIN IEC 60747-6
f = 50 Hz, i
GM
= 1 A, di
G
/dt = 1 A/µs
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
th
5.Kennbuchstabe / 5 letter F
T
C
= 85 °C
T
C
= 55 °C,
θ
= 180°sin, t
P
= 10 ms
V
DRM
,V
RRM
1200
1400
V
DSM
V
RSM
I
TRMSM
I
TAVM
I
TAVM
I
TRMS
I
TSM
I²t
(di
T
/dt)
cr
(dv
D
/dt)
cr
1200
1400
1300
1500
1600 V
1800 V
1600 V
1800 V
1700 V
1900 V
1500 A
844 A
1220 A
1920 A
14500 A
12500 A
1051 10³ A²s
781 10³ A²s
120 A/µs
1000 V/µs
T
vj
= +25°C... T
vj max
T
vj
= T
vj max
, i
T
= 3000 A
T
vj
= T
vj max
, i
T
= 750 A
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= T
vj max
v
T
V
(TO)
r
T
A=
B=
C=
D=
I
GT
V
GT
I
GD
V
GD
I
H
I
L
i
D
, i
R
max.
max.
1,94 V
1,20 V
0,85 V
0,35 mΩ
v
T
=
A
+
B
i
T
+
C
ln ( i
T
+
1)
+
D
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
i
T
T
vj
= 25 °C, v
D
= 12V
T
vj
= 25 °C, v
D
= 12V
T
vj
= T
vj max
, v
D
= 12V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= 25°C, v
D
= 12V
T
vj
= 25°C, v
D
= 12V, R
GK
10
i
GM
= 1 A, di
G
/dt = 1 A/µs, t
g
= 20 µs
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
1,173E+00
1,489E-04
-9,456E-02
1,966E-02
max.
max.
max.
max.
max.
max.
max.
max.
max.
250 mA
1,5 V
10 mA
5 mA
0,2 V
300 mA
1500 mA
80 mA
4 µs
DIN IEC 60747-6
t
gd
T
vj
= 25 °C, i
GM
= 1 A, di
G
/dt = 1 A/µs
prepared by: H.Sandmann
approved by: M.Leifeld
date of publication:
revision:
2010-09-02
3.2
IFBIP D AEC / 2010-09-02, H.Sandmann
A 26/10
Seite/page
1/10

T830N18TOF Related Products

T830N18TOF T830N14TOF
Description SCRs Phse Cntrl Thyristrs 830A 1800V SCRs Phse Cntrl Thyristrs 830A 1400V
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker Infineon Infineon
package instruction DISK BUTTON, O-XXDB-X3 DISK BUTTON, O-XXDB-X3
Reach Compliance Code compliant compliant
Nominal circuit commutation break time 250 µs 250 µs
Configuration SINGLE SINGLE
Critical rise rate of minimum off-state voltage 1000 V/us 1000 V/us
Maximum DC gate trigger current 250 mA 250 mA
Maximum DC gate trigger voltage 1.5 V 1.5 V
Maximum holding current 300 mA 300 mA
JESD-30 code O-XXDB-X3 O-XXDB-X3
Maximum leakage current 80 mA 80 mA
On-state non-repetitive peak current 14500 A 14500 A
Number of components 1 1
Number of terminals 3 3
Maximum on-state current 826000 A 826000 A
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C
Package body material UNSPECIFIED UNSPECIFIED
Package shape ROUND ROUND
Package form DISK BUTTON DISK BUTTON
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified
Maximum rms on-state current 1880 A 1880 A
Off-state repetitive peak voltage 1800 V 1400 V
Repeated peak reverse voltage 1800 V 1400 V
surface mount YES YES
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UNSPECIFIED UNSPECIFIED
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Trigger device type SCR SCR
Looking for LDC1314 user manual and program examples
[color=#666666][url=https://bbs.eeworld.com.cn/thread-495395-1-1.html]Requesting LDC1314 user manual and program examples[/url][/color]...
DZXX123 51mcu
Has anyone used AD5933?
The AD5933 uses a frequency generator to generate a signal to excite the external complex impedance, which is then sampled by the on-chip DAC. Then the on-chip DSP performs DFT processing to obtain th...
蓝雨夜 Analog electronics
Design of 220V-24V power frequency transformer
I would like to ask you experts, is there a design schematic diagram for converting 220v to ±24v, using an industrial frequency transformer, and outputting 24v after rectification, filtering and volta...
萤火 Power technology
MSP430 start bit reading and transcoding problem
Dear experts, I just came into contact with MSP430 and encountered a question: After MSP430 is powered on, it starts to read Rom information from "C000". The following are the values stored in Rom of ...
l67088 Microcontroller MCU
stm32f769 register configuration SD card --- transplant fatfs -- realize file read operation
After loading the SD card, we will continue to open the file. There is a data.txt file in the SD card, and its content is 123 abc. Now we need to open the file. Add the following code to the main func...
star_66666 stm32/stm8
Problems with two-block data transfer mode in ADC10
What does the two-block data transfer mode set by TB in ADC10DTC0 mean? Is it related to the multi-channel mode? Also, does ADC10DCT1=0X10 mean that the number of bits per conversion is 32 bits? Then ...
Domen Microcontroller MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 627  2360  390  1532  1610  13  48  8  31  33 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号