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CY7C1049CV33-12ZSXAT

Description
SRAM 4Mb 12ns 3.3V 512Kx8 Fast Async SRAM
Categorystorage    storage   
File Size857KB,15 Pages
ManufacturerCypress Semiconductor
Environmental Compliance
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CY7C1049CV33-12ZSXAT Overview

SRAM 4Mb 12ns 3.3V 512Kx8 Fast Async SRAM

CY7C1049CV33-12ZSXAT Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerCypress Semiconductor
package instructionLEAD FREE, TSOP2-44
Reach Compliance Codecompliant
ECCN code3A991.B.2.B
Maximum access time12 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-G44
JESD-609 codee4
length18.415 mm
memory density4194304 bit
Memory IC TypeSTANDARD SRAM
memory width8
Humidity sensitivity level3
Number of functions1
Number of terminals44
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSOP44,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply3.3 V
Certification statusNot Qualified
Filter levelAEC-Q100
Maximum seat height1.194 mm
Maximum standby current0.01 A
Minimum standby current3 V
Maximum slew rate0.095 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceNickel/Palladium/Gold (Ni/Pd/Au)
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
Maximum time at peak reflow temperature20
width10.16 mm
CY7C1049CV33 Automotive
4-Mbit (512 K × 8) Static RAM
4-Mbit (512 K × 8) Static RAM
Features
Functional Description
The CY7C1049CV33 Automotive is a high performance CMOS
Static RAM organized as 524,288 words by eight bits. Easy
memory expansion is provided by an active LOW Chip Enable
(CE), an active LOW Output Enable (OE), and three-state
drivers. Writing to the device is accomplished by taking Chip
Enable (CE) and Write Enable (WE) inputs LOW. Data on the
eight I/O pins (I/O
0
through I/O
7
) is then written into the location
specified on the address pins (A
0
through A
18
).
Reading from the device is accomplished by taking Chip Enable
(CE) and Output Enable (OE) LOW while forcing Write Enable
(WE) HIGH. Under these conditions, the contents of the memory
location specified by the address pins appear on the I/O pins.
The eight input and output pins (I/O
0
through I/O
7
) are placed in
a high impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE LOW, and WE LOW).
The CY7C1049CV33 Automotive is available in standard
400-mil-wide 36-pin SOJ package and 44-pin TSOP II package
with center power and ground (revolutionary) pinout.
Temperature ranges
Automotive -A: –40 °C to 85 °C
Automotive-E: –40 °C to 125 °C
High speed
t
AA
= 10 ns
Low active power
360 mW (max)
2.0 V data retention
Automatic power down when deselected
TTL-compatible inputs and outputs
Easy memory expansion with CE and OE features
Logic Block Diagram
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
CE
WE
OE
INPUT BUFFER
ROW DECODER
IO0
IO1
SENSE AMPS
IO2
IO3
IO4
IO5
IO6
512K x 8
ARRAY
COLUMN DECODER
POWER
DOWN
IO7
A13
A14
A15
A16
A17
A18
Cypress Semiconductor Corporation
Document Number: 001-67511 Rev. *C
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised March 21, 2014

CY7C1049CV33-12ZSXAT Related Products

CY7C1049CV33-12ZSXAT
Description SRAM 4Mb 12ns 3.3V 512Kx8 Fast Async SRAM
Is it lead-free? Lead free
Is it Rohs certified? conform to
Maker Cypress Semiconductor
package instruction LEAD FREE, TSOP2-44
Reach Compliance Code compliant
ECCN code 3A991.B.2.B
Maximum access time 12 ns
I/O type COMMON
JESD-30 code R-PDSO-G44
JESD-609 code e4
length 18.415 mm
memory density 4194304 bit
Memory IC Type STANDARD SRAM
memory width 8
Humidity sensitivity level 3
Number of functions 1
Number of terminals 44
word count 524288 words
character code 512000
Operating mode ASYNCHRONOUS
Maximum operating temperature 85 °C
Minimum operating temperature -40 °C
organize 512KX8
Output characteristics 3-STATE
Package body material PLASTIC/EPOXY
encapsulated code TSOP2
Encapsulate equivalent code TSOP44,.46,32
Package shape RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE
Parallel/Serial PARALLEL
Peak Reflow Temperature (Celsius) 260
power supply 3.3 V
Certification status Not Qualified
Filter level AEC-Q100
Maximum seat height 1.194 mm
Maximum standby current 0.01 A
Minimum standby current 3 V
Maximum slew rate 0.095 mA
Maximum supply voltage (Vsup) 3.6 V
Minimum supply voltage (Vsup) 3 V
Nominal supply voltage (Vsup) 3.3 V
surface mount YES
technology CMOS
Temperature level INDUSTRIAL
Terminal surface Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal form GULL WING
Terminal pitch 0.8 mm
Terminal location DUAL
Maximum time at peak reflow temperature 20
width 10.16 mm

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