DMG6968U
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
25mΩ @ V
GS
= 4.5V
29mΩ @ V
GS
= 2.5V
36mΩ @ V
GS
= 1.8V
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish — Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
e3
Terminals Connections: See Diagram Below
Weight: 0.008 grams (approximate)
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 2kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Drain
Gate
D
Gate
Protection
Diode
ESD PROTECTED TO 2kV
Source
G
S
Top View
Internal Schematic
Top View
Ordering Information
(Note 5)
Part Number
DMG6968U-7
DMG6968UQ-7
Notes:
Compliance
Standard
Automotive
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
YM
YM
2N4
2N4
2N4 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or
Y
= Year (ex: A = 2013)
M = Month (ex: 9 = September)
Chengdu A/T Site
Date Code Key
Year
Code
Month
Code
2009
W
Jan
1
Feb
2
Shanghai A/T Site
2010
X
Mar
3
Apr
4
2011
Y
May
5
Jun
6
2012
Z
Jul
7
2013
A
Aug
8
Sep
9
2014
B
Oct
O
Nov
N
2015
C
Dec
D
DMG6968U
Document number: DS31738 Rev. 6 - 2
1 of 6
www.diodes.com
October 2013
© Diodes Incorporated
DMG6968U
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6)
Pulsed Drain Current
Steady
State
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
20
±12
6.5
5.2
30
Units
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @ T
A
= +25°C
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
T
J,
T
STG
Value
1.3
157
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Gate-Source Breakdown Voltage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
T
J
= +25°C
I
DSS
I
GSS
BV
SGS
V
GS(th)
R
DS(ON)
|Y
fs
|
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
20
±12
0.5
Typ
—
21
23
28
8
151
91
32
8.5
1.6
2.8
54
66
613
205
Max
1.0
±10
—
0.9
25
29
36
Unit
V
µA
µA
V
V
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 20V, V
GS
= 0V
V
GS
=
10V,
V
DS
= 0V
V
DS
= 0V, I
G
=
250µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 4.5V, I
D
= 6.5A
V
GS
= 2.5V, I
D
= 5.5A
V
GS
= 1.8V, I
D
= 3.5A
V
DS
= 10V, I
D
= 5A
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
V
GS
= 4.5V, V
DS
= 10V, I
D
= 6.5A
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 10, R
G
= 6, I
D
= 1A
6. Device mounted on FR-4 substrate PC board, 2oz. copper, with thermal vias to bottom layer 1 inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMG6968U
Document number: DS31738 Rev. 6 - 2
2 of 6
www.diodes.com
October 2013
© Diodes Incorporated
DMG6968U
20
20
V
DS
= 5V
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 3.0V
V
GS
= 2.5V
16
I
D
, DRAIN CURRENT (A)
16
I
D
, DRAIN CURRENT (A)
12
V
GS
= 2.0V
V
GS
= 1.5V
12
8
8
T
A
= 150°C
4
4
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0
0
0.5
1 1.5 2 2.5 3 3.5 4 4.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
5
0
0.5
1
1.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
2
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.04
0.06
0.05
0.04
V
GS
= 4.5V
0.03
V
GS
= 1.8V
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
V
GS
= 2.5V
V
GS
= 4.5V
0.03
0.02
0.02
T
A
= 25°C
T
A
= -55°C
0.01
0
0.01
0
5
10
15
20
25
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
30
0
4
8
12
16
I
D
, DRAIN CURRENT (A)
20
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
1.6
R
DSON
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
V
GS
= 2.5V
I
D
= 5.5A
0.06
0.05
R
DSON
, DRAIN-SOURCE
ON-RESISTANCE (
)
1.4
1.2
V
GS
= 4.5V
I
D
= 6.5A
0.04
V
GS
= 2.5V
I
D
= 5.5A
0.03
1.0
V
GS
= 4.5V
I
D
= 6.5A
0.02
0.8
0.01
0
-50
0.6
-50
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
Fig. 6 On-Resistance Variation with Temperature
DMG6968U
Document number: DS31738 Rev. 6 - 2
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October 2013
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DMG6968U
1.4
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
1.2
16
1.0
0.8
0.6
0.4
0.2
0
-50 -25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
I
D
= 1mA
I
D
= 250µA
20
I
S
, SOURCE CURRENT (A)
T
A
= 25°C
12
8
4
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
500
450
400
C, CAPACITANCE (pF)
350
300
250
200
150
100
50
0
C
rss
C
iss
100,000
I
DSS
, LEAKAGE CURRENT (nA)
10,000
T
A
= 150°C
1,000
T
A
= 125°C
100
T
A
= 85°C
C
oss
10
T
A
= -55°C
T
A
= 25°C
0
8
12
16
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
4
20
1
0
2
4
6
8 10 12 14 16 18 20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
0.1
D = 0.1
D = 0.9
D = 0.05
R
JA
(t) = r(t) * R
JA
R
JA
= 162°C/W
P(pk)
D = 0.02
0.01
D = 0.01
D = 0.005
t
1
D = Single Pulse
t
2
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/t
2
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
t
1
, PULSE DURATION TIME (s)
Fig. 11 Transient Thermal Response
10
100
1,000
DMG6968U
Document number: DS31738 Rev. 6 - 2
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October 2013
© Diodes Incorporated
DMG6968U
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
-
-
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°
-
All Dimensions in mm
A
B C
H
K
J
F
D
G
L
K1
M
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.
Y
Z
C
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
X
E
DMG6968U
Document number: DS31738 Rev. 6 - 2
5 of 6
www.diodes.com
October 2013
© Diodes Incorporated
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