switches were designed to provide high performance
switching of analog signals. Combining low power, low
leakages, high speed, low on-resistance and small physical
size, the DG417 series is ideally suited for portable and
battery powered industrial and military applications requiring
high performance and efficient use of board space.
To achieve high-voltage ratings and superior switching
performance, the DG417 series is built on Vishay Siliconix’s
high voltage silicon gate (HVSG) process. Break-before-
make is guaranteed for the DG419, which is an SPDT
configuration. An epitaxial layer prevents latchup.
Each switch conducts equally well in both directions when
on, and blocks up to the power supply level when off.
The DG417 and DG418 respond to opposite control logic
levels as shown in the Truth Table.
FEATURES
•
•
•
•
•
•
± 15 V analog signal range
On-resistance - R
DS(on)
: 20
Fast switching action - t
ON
: 100 ns
Ultra low power requirements - P
D
: 35 nW
TTL and CMOS compatible
MiniDIP and SOIC packaging
•
44 V supply max. rating
•
44 V supply max. rating
•
Compliant to RoHS directive 2002/95/EC
BENEFITS
•
•
•
•
•
•
Wide dynamic range
Low signal errors and distortion
Break-before-make switching action
Simple interfacing
Reduced board space
Improved reliability
APPLICATIONS
•
•
•
•
•
•
•
Precision test equipment
Precision instrumentation
Battery powered systems
Sample-and-hold circuits
Military radios
Guidance and control systems
Hard disk drives
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG417
Dual-In-Line and SOIC
S
NC
GND
V+
1
2
3
4
Top View
8
7
6
5
D
V-
IN
V
L
TRUTH TABLE
Logic
0
1
Logic "0"
0.8
V
Logic "1"
2.4
V
DG417
ON
OFF
DG418
OFF
ON
DG419
Dual-In-Line and SOIC
D
S
1
GND
V+
1
2
3
4
Top View
8
7
6
5
S
2
V-
IN
V
L
TRUTH TABLE
DG419
Logic
0
1
Logic "0"
0.8
V
Logic "1"
2.4
V
SW
1
ON
OFF
SW
2
OFF
ON
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 70051
S10-1528-Rev. G, 19-Jul-10
www.vishay.com
1
DG417, DG418, DG419
Vishay Siliconix
ORDERING INFORMATION
Temp. Range
DG417, DG418
Package
Part Number
DG417DJ
DG417DJ-E3
DG418DJ
DG418DJ-E3
DG417DY
DG417DY-E3
DG417DY-T1
DG417DY-T1-E3
8-Pin Narrow SOIC
DG418DY
DG418DY-E3
DG418DY-T1
DG418DY-T1-E3
DG419
8-Pin Plastic MiniDIP
- 40 °C to 85 °C
8-Pin Narrow SOIC
DG419DJ
DG419DJ-E3
DG419DY
DG419DY-E3
DG419DY-T1
DG419DY-T1-E3
8-Pin Plastic MiniDIP
- 40 °C to 85 °C
ABSOLUTE MAXIMUM RATINGS
Parameter
(Voltages referenced to V-)
V+
GND
V
L
Digital Inputs
a
, V
S
, V
D
Current , (Any Terminal) Continuous
Current, S or D (Pulsed at 1 ms, 10 % Duty Cycle)
Storage Temperature
(AK Suffix)
(DJ, DY Suffix)
8-Pin Plastic MiniDIP
c
Power Dissipation (Package)
b
Limit
44
25
(GND - 0.3) to (V+) + 0.3
(V-) - 2 to (V+) + 2
or 30 mA, whichever occurs first
30
100
- 65 to 150
- 65 to 125
400
400
600
d
Unit
V
mA
°C
8-Pin Narrow SOIC
8-Pin CerDIP
e
mW
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6 mW/°C above 75 °C.
d. Derate 6.5 mW/°C above 75 °C.
e. Derate 12 mW/°C above 75 °C.
www.vishay.com
2
Document Number: 70051
S10-1528-Rev. G, 19-Jul-10
DG417, DG418, DG419
Vishay Siliconix
SCHEMATIC DIAGRAM
Typical Channel
V+
S
V
L
V-
V
IN
Level
Shift/
Drive
V+
GND
D
V-
Figure 1.
SPECIFICATIONS
a
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
Symbol
V
ANALOG
R
DS(on)
I
S(off)
Switch Off Leakage
Current
V+ = 16.5, V- = - 16.5 V
V
D
=
±
15.5 V
I
D(off)
V
S
=
±
15.5 V
DG417
DG418
DG419
Channel Off Leakage
Current
Digital Control
Input Current V
IN
Low
Input Current V
IN
High
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Transition Time
Break-Before-Make
Time Delay (DG403)
Charge Injection
t
ON
t
OFF
t
TRANS
t
D
Q
R
L
= 300
,
C
L
= 35 pF
V
S
=
±
10 V
See Switching Time
Test Circuit
R
L
= 300
,
C
L
= 35 pF
V
S1
=
±
10 V, V
S2
=
±
10 V
R
L
= 300
,
C
L
= 35 pF
V
S1
= V
S2
=
±
10 V
DG417
DG418
DG417
DG418
DG419
DG419
Room
Full
Room
Full
Room
Full
Room
Room
13
60
5
100
60
175
250
145
210
175
250
5
pC
175
250
145
210
175
250
ns
V+ = 16.5 V, V- = - 16.5 V
V
S
= V
D
=
±
15.5 V
DG417
DG418
DG419
I
S
= - 10 mA, V
D
=
±
12.5 V
V+ = 13.5 V, V- = - 13.5 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
Temp.
b
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Full
Full
20
- 0.1
- 0.1
- 0.1
- 0.4
- 0.4
- 0.25
- 20
- 0.25
- 20
- 0.75
- 60
- 0.4
- 40
- 0.75
- 60
- 0.5
- 0.5
Typ.
c
A Suffix
D Suffix
- 55 °C to 125 °C - 40 °C to 85 °C
Min.
d
- 15
Max.
d
15
35
45
0.25
20
0.25
20
0.75
60
0.4
40
0.75
60
0.5
0.5
- 0.25
-5
- 0.25
-5
- 0.75
- 12
- 0.4
- 10
- 0.75
- 12
- 0.5
- 0.5
Min.
d
- 15
Max.
d
15
35
45
0.25
5
0.25
5
0.75
12
0.4
10
0.75
12
0.5
0.5
Unit
V
nA
I
D(on)
I
IL
I
IH
0.005
0.005
µA
C
L
= 10 nF, V
gen
= 0 V, R
gen
= 0
Document Number: 70051
S10-1528-Rev. G, 19-Jul-10
www.vishay.com
3
DG417, DG418, DG419
Vishay Siliconix
SPECIFICATIONS
a
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
Parameter
Symbol
Dynamic Characteristics
Source Off
C
S(off)
Capacitance
Drain Off Capacitance
Channel On
Capacitance
Power Supplies
Positive Supply Current
Negative Supply
Current
Logic Supply Current
Ground Current
I+
I-
I
L
I
GND
V+ = 16.5 V, V- = - 16.5 V
V
IN
= 0 or 5 V
Room
Full
Room
Full
Room
Full
Room
Full
0.001
- 0.001
0.001
- 0.0001
-1
-5
-1
-5
1
5
-1
-5
1
5
-1
-5
1
5
1
5
µA
C
D(off)
C
D(on)
f = 1 MHz, V
S
=
0
V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
Temp.
b
Typ.
c
A Suffix
D Suffix
- 55 °C to 125 °C - 40 °C to 85 °C
Min.
d
Max.
d
Min.
d
Max.
d
Unit
Room
f = 1 MHz, V
S
=
0
V
DG417
DG418
DG417
DG418
DG419
Room
Room
Room
8
8
30
35
pF
SPECIFICATIONS
a
for Unipolar Supplies
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
Power Supplies
Positive Supply
Current
Negative Supply
Current
Logic Supply
Current
Ground
Current
t
ON
t
OFF
t
D
Q
R
L
= 300
,
C
L
= 35 pF, V
S
=
8
V
See Switching Time Test Circuit
DG419 Only
R
L
= 300
,
C
L
= 35 pF
C
L
= 10 nF, V
gen
= 0 V, R
gen
= 0
Room
Room
Room
Room
110
40
60
5
pC
ns
Symbol
V
ANALOG
R
DS(on)
I
S
= - 10 mA, V
D
=
3.8
V
V+ = 10.8 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
Temp.
b
Full
Room
40
Typ.
c
A Suffix
- 55 °C to 125 °C
Min.
d
0
Max.
d
12
D Suffix
- 40 °C to 85 °C
Min.
d
0
Max.
d
12
Unit
V
I+
I-
I
L
I
GND
V+ = 13.2 V, V
L
= 5.25 V
V
IN
= 0 or 5 V
Room
Room
Room
Room
0.001
- 0.001
µA
0.001
- 0.001
Notes:
a. Refer to Process Option Flowchart.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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