BAW101...
Silicon Switching Diode
•
Electrically insulated high-voltage
medium-speed diodes
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
BAW101
"
!
,
,
Type
BAW101
Package
SOT143
Configuration
parallel
Marking
JPs
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
Peak forward current
Peak forward current
Surge forward current,
t
= 1 µs
Non-repetitive peak surge forward current
Total power dissipation
T
S
≤
35°C
Junction temperature
Storage temperature
1
Pb-containing
Symbol
V
R
V
RM
I
F
I
FM
I
FM
I
FS
I
FSM
P
tot
T
j
T
stg
Value
300
300
250
500
500
4.5
-
350
150
-65 ... 150
Unit
V
mA
mA
A
mW
°C
package may be available upon special request
1
2007-04-20
BAW101...
Thermal Resistance
Parameter
Junction - soldering point
1)
BAW101
Symbol
R
thJS
Value
≤
330
Unit
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
DC Characteristics
300
-
-
V
Breakdown voltage
V
(BR)
I
(BR)
= 100 µA
Reverse current
V
R
= 250 V
V
R
= 250 V,
T
A
= 150 °C
Forward voltage
I
F
= 100 mA
AC Characteristics
Diode capacitance
V
R
= 0 V,
f
= 1 MHz
Reverse recovery time
I
F
= 10 mA,
I
R
= 10 mA, measured at
I
R
= 1mA,
R
L
= 100
Ω
Test circuit for reverse recovery time
D.U.T.
I
R
-
-
V
F
-
-
-
-
0.15
50
1.3
µA
V
C
T
t
rr
-
-
6
1
-
-
pF
µs
Pulse generator:
t
p
= 10µs,
D
= 0.05,
t
r
= 0.6ns,
R
i
= 50Ω
Oscillograph
Ι
F
Oscillograph:
R
= 50Ω,
t
r
= 0.35ns,
C
≤
1pF
EHN00019
1
For
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
2007-04-20
BAW101...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
5
2007-04-20
RF/Wirelessly
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