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BC847BTT1

Description
Bipolar Transistors - BJT 100mA 50V NPN
CategoryDiscrete semiconductor    The transistor   
File Size72KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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Bipolar Transistors - BJT 100mA 50V NPN

BC847BTT1 Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Contains lead
MakerON Semiconductor
Parts packaging codeSC-75
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Manufacturer packaging code463-01
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
BC847ATT1, BC847BTT1,
BC847CTT1
General Purpose
Transistors
NPN Silicon
http://onsemi.com
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−75/SOT−416 package which
is designed for low power surface mount applications.
Features
COLLECTOR
3
1
BASE
2
EMITTER
Pb−Free Packages are Available*
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Max
45
50
6.0
100
Unit
V
V
V
mAdc
1
3
2
CASE 463
SC−75/SOT−41
6
STYLE 1
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR−4 Board (Note 1)
T
A
= 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation,
FR−4 Board (Note 2)
T
A
= 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
1. FR−4 @ min pad.
2. FR−4 @ 1.0
×
1.0 in pad.
Symbol
P
D
200
1.6
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
400
−55 to
+150
mW
mW/°C
°C/W
°C
600
mW
mW/°C
°C/W
xx = Device Code
M = Date Code
Max
Unit
xxM
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2004
1
June, 2004 − Rev. 1
Publication Order Number:
BC847ATT1/D
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