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ZXMN6A09DN8TC

Description
MOSFET 60V N-Chan
CategoryDiscrete semiconductor    The transistor   
File Size568KB,8 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
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ZXMN6A09DN8TC Overview

MOSFET 60V N-Chan

ZXMN6A09DN8TC Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDiodes Incorporated
Objectid1810808296
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
compound_id3706171
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)5.1 A
Maximum drain current (ID)3.9 A
Maximum drain-source on-resistance0.045 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1.25 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
ZXMN6A09DN8
60V SO8 N-channel enhancement mode MOSFET
Summary
V
(BR)DSS
60
R
DS(on)
( )
0.040 @ V
GS
= 10V
0.060 @ V
GS
= 4.5V
I
D
(A)
5.6
4.6
Description
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage
power management applications.
Features
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOIC package
D1
D2
G1
S1
G2
S2
Applications
DC-DC converters
Power management functions
Disconnect switches
Motor control
G1
S2
G2
Top view
D1
D2
D2
S1
D1
Ordering information
Device
ZXMN6A09DN8TA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity
per reel
500
Device marking
ZXMN
6A09D
Issue 6 - January 2007
© Zetex Semiconductors plc 2007
1
www.zetex.com
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