BLF888A; BLF888AS
UHF power LDMOS transistor
Rev. 6 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The excellent ruggedness of this device makes it ideal for digital and analog
transmitter applications.
Table 1.
Application information
RF performance at V
DS
= 50 V unless otherwise specified.
Mode of operation
f
(MHz)
CW
CW (42 V)
2-tone, class-AB
pulsed, class-AB
[1]
DVB-T (8k OFDM)
650
650
f
1
= 860; f
2
= 860.1
860
858
858
DVB-T (8k OFDM)
858
858
[1]
[2]
[3]
Measured at
= 10 %; t
p
= 100
s.
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
P
L(AV)
(W)
-
-
250
-
110
125
110
120
P
L(M)
(W)
600
500
-
600
-
-
-
-
G
p
(dB)
20
20
21
20
21
21
20
20
D
(%)
67
69
46
58
31
32.5
30
31
IMD3
(dBc)
-
-
32
-
-
-
-
-
IMD
shldr
(dBc)
-
-
-
-
32
[2]
30
[2]
32
[2]
31
[2]
PAR
(dB)
-
-
-
-
8.2
[3]
8.0
[3]
8.0
[3]
7.8
[3]
RF performance in a common source narrowband test circuit
RF performance in a common source 470 MHz to 860 MHz broadband test circuit
1.2 Features and benefits
Excellent ruggedness (VSWR
40 : 1 through all phases)
Optimum thermal behavior and reliability, R
th(j-c)
= 0.15 K/W
Suitable for CW UHF and ISM applications
High power gain
High efficiency
Designed for broadband operation (470 MHz to 860 MHz)
Internal input matching for high gain and optimum broadband operation
Excellent reliability
Easy power control
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
BLF888A; BLF888AS
UHF power LDMOS transistor
1.3 Applications
Communication transmitter applications in the UHF band
Industrial applications in the UHF band
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1]
Simplified outline
Graphic symbol
BLF888A (SOT539A)
1
2
5
3
3
4
4
5
1
2
sym117
BLF888AS (SOT539B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
[1]
1
2
5
1
3
4
3
5
4
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLF888A
BLF888AS
-
-
Description
flanged balanced ceramic package;
2 mounting holes; 4 leads
earless flanged balanced ceramic package;
4 leads
Version
SOT539A
SOT539B
Type number
BLF888A_BLF888AS#6
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 6 — 1 September 2015
2 of 17
BLF888A; BLF888AS
UHF power LDMOS transistor
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
calculator.
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
[1]
Max
110
+11
+150
225
Unit
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
5. Thermal characteristics
Table 5.
R
th(j-c)
[1]
Thermal characteristics
Conditions
[1]
Symbol Parameter
Typ
Unit
thermal resistance from junction to case T
case
= 80
C;
P
L(AV)
= 125 W
0.15 K/W
R
th(j-c)
is measured under RF conditions.
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
R
DS(on)
C
iss
C
oss
C
rss
[1]
[2]
Conditions
V
GS
= 0 V; I
D
= 2.4 mA
V
DS
= 10 V; I
D
= 240 mA
V
GS
= 0 V; V
DS
= 50 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 10 V; V
DS
= 0 V
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 8.5 A
V
GS
= 0 V; V
DS
= 50 V;
f = 1 MHz
V
GS
= 0 V; V
DS
= 50 V;
f = 1 MHz
V
GS
= 0 V; V
DS
= 50 V;
f = 1 MHz
[1]
[1]
[1]
Min Typ Max Unit
110 -
1.4
-
-
-
-
-
-
-
1.9
-
36
-
-
2.4
2.8
-
280
V
V
A
A
nA
m
pF
pF
pF
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
drain-source on-state resistance
input capacitance
output capacitance
reverse transfer capacitance
143 -
220 -
74
1.2
-
-
[2]
I
D
is the drain current.
Capacitance values without internal matching.
BLF888A_BLF888AS#6
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 6 — 1 September 2015
3 of 17
BLF888A; BLF888AS
UHF power LDMOS transistor
Table 7.
RF characteristics
RF characteristics in Ampleon production narrowband test circuit; T
case
= 25
C unless otherwise
specified.
Symbol
V
DS
I
Dq
P
L(AV)
G
p
D
IMD3
Parameter
drain-source voltage
quiescent drain current
average output power
power gain
drain efficiency
third-order intermodulation distortion
f
1
= 860 MHz;
f
2
= 860.1 MHz
f
1
= 860 MHz;
f
2
= 860.1 MHz
f
1
= 860 MHz;
f
2
= 860.1 MHz
f
1
= 860 MHz;
f
2
= 860.1 MHz
[1]
Conditions
Min Typ Max Unit
-
-
50
1.3
-
-
-
-
-
V
A
W
dB
%
dBc
2-Tone, class-AB
250 -
20
42
-
21
46
32 28
DVB-T (8k OFDM), class-AB
V
DS
I
Dq
P
L(AV)
G
p
D
IMD
shldr
PAR
[1]
[2]
[3]
drain-source voltage
quiescent drain current
average output power
power gain
drain efficiency
intermodulation distortion shoulder
peak-to-average ratio
f = 858 MHz
f = 858 MHz
f = 858 MHz
f = 858 MHz
f = 858 MHz
[2]
[3]
[1]
-
-
110
20
28
-
-
50
1.3
-
21
31
8.2
-
-
-
-
-
-
V
A
W
dB
%
dBc
dB
32 28
I
Dq
for total device.
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
400
C
oss
(pF)
300
001aam579
200
100
0
0
20
40
V
DS
(V)
60
V
GS
= 0 V; f = 1 MHz.
Fig 1.
BLF888A_BLF888AS#6
Output capacitance as a function of drain-source voltage; typical values per
section
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 6 — 1 September 2015
4 of 17
BLF888A; BLF888AS
UHF power LDMOS transistor
6.1 Ruggedness in class-AB operation
The BLF888A and BLF888AS are capable of withstanding a load mismatch corresponding
to VSWR
40 : 1 through all phases under the following conditions: V
DS
= 50 V;
f = 860 MHz at rated power.
7. Application information
7.1 Narrowband RF figures
7.1.1 2-Tone
001aan761
001aan762
24
G
p
(dB)
20
G
p
60
η
D
(%)
40
24
G
p
(dB)
20
G
p
0
IMD3
(dBc)
-20
η
D
IMD3
16
20
16
-40
12
0
100
200
300
0
400
500
P
L(AV)
(W)
12
0
100
200
300
-60
400
500
P
L(AV)
(W)
V
DS
= 50 V; I
Dq
= 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
V
DS
= 50 V; I
Dq
= 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
Fig 2.
2-Tone power gain and drain efficiency as
function of load power; typical values
Fig 3.
2-Tone power gain and third order
intermodulation distortion as load power;
typical values
BLF888A_BLF888AS#6
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 6 — 1 September 2015
5 of 17
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