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2N7002KT3G

Description
MOSFET SMALL SIGNAL MOSFET 60V 380mA SINGL CH
CategoryDiscrete semiconductor    The transistor   
File Size84KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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2N7002KT3G Overview

MOSFET SMALL SIGNAL MOSFET 60V 380mA SINGL CH

2N7002KT3G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
Parts packaging codeSOT-23
package instructionLEAD FREE, CASE 318-08, TO-236, 3 PIN
Contacts3
Manufacturer packaging code318-08
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)0.32 A
Maximum drain current (ID)0.32 A
Maximum drain-source on-resistance1.6 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2N7002K, 2V7002K
Small Signal MOSFET
60 V, 380 mA, Single, N−Channel, SOT−23
Features
ESD Protected
Low R
DS(on)
Surface Mount Package
2V Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
www.onsemi.com
V
(BR)DSS
60 V
R
DS(on)
MAX
1.6
W
@ 10 V
2.5
W
@ 4.5 V
I
D
MAX
380 mA
SIMPLIFIED SCHEMATIC
Gate
Low Side Load Switch
Level Shift Circuits
DC−DC Converter
Portable Applications i.e. DSC, PDA, Cell Phone, etc.
1
3
Drain
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage
Drain Current (Note 1)
Steady State 1 sq in Pad
Drain Current (Note 2)
Steady State Minimum Pad
Power Dissipation
Steady State 1 sq in Pad
Steady State Minimum Pad
Pulsed Drain Current (t
p
= 10
ms)
Operating Junction and Storage
Temperature Range
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Gate−Source ESD Rating
(HBM, Method 3015)
T
A
= 25°C
T
A
= 85°C
I
D
T
A
= 25°C
T
A
= 85°C
P
D
420
300
I
DM
T
J
, T
STG
I
S
T
L
ESD
5.0
−55 to
+150
300
260
2000
A
°C
mA
°C
V
320
230
mW
Symbol
V
DSS
V
GS
I
D
380
270
mA
1
2
Value
60
±20
Unit
V
Source
2
(Top View)
V
mA
3
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
SOT−23
CASE 318
STYLE 21
704 MG
G
1
2
Gate
Source
704
= Specific Device Code*
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Specific Device Code, Date Code or overbar
orientation and/or location may vary depend-
ing upon manufacturing location. This is a
representation only and actual devices may
not match this drawing exactly.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq in pad size with 1 oz Cu.
2. Surface−mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu.
ORDERING INFORMATION
Device
2N7002KT1G
2V7002KT1G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2007
1
October, 2016 − Rev. 15
Publication Order Number:
2N7002K/D
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