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BFS17TA

Description
Bipolar Transistors - BJT
CategoryDiscrete semiconductor    The transistor   
File Size37KB,3 Pages
ManufacturerDiodes Incorporated
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Bipolar Transistors - BJT

BFS17TA Parametric

Parameter NameAttribute value
MakerDiodes Incorporated
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.025 A
Collector-based maximum capacity1.5 pF
Collector-emitter maximum voltage15 V
ConfigurationSINGLE
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)1300 MHz
Base Number Matches1
BFS17
Transistors
NPN small signal transistor
BFS17
Features
1) Ideal for RF applications.
2) Mixers and oscillations in TV tuners.
3) RF communications equipment.
Dimensions
(Unit : mm)
BFS17
2.9
0.4
(3)
0.95
0.45
Packaging specifications
(2)
(1)
Package
Type
BFS17
Code
Basic ordering unit (pieces)
Taping
T116
3000
(1)Emitter
(2)Base
(3)Collector
0.95 0.95
1.9
1.3
2.4
0.15
Each lead has same dimensions
Abbreviated symbol : GMA
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
25
15
2.5
0.05
0.20
0.25
150
−55
to 150
Unit
V
V
V
A
W
W
°C
°C
Mounted on a 7
×
5
×
0.6 mm CERAMIC SUBSTRATE
Electrical characteristics
(Ta=25°C)
Parameter
Symbol
Min.
15
5
2.5
20
20
Transition frequency
Collector output capacitance
Collector input capacitance
Collector-base cutoff current
f
T
Cob
Cib
I
CBO
Typ.
1000
Max.
0.1
150
1.5
2.0
10
Unit
V
V
V
I
C
=
1mA
I
C
=
50
µ
A
I
E
=
50
µ
A
V
CB
=
10V
V
CE
=
1V, I
C
=
2mA
V
CE
=
1V, I
C
=
25mA
V
CE
=
5V, I
C
=
10mA
V
CB
=
10V, f=1MHz
V
CB
=
0.5V, f=1MHz
V
CB
=
10V, Ta=100
°C
Conditions
Collector-emitter breakdown voltage BV
CEO
Collector-emitter breakdown voltage BV
CBO
Emitter-base breakdown voltage
Collector-base cutoff current
DC current transfer ratio
BV
EBO
I
CBO
h
FE
µ
A
MHz
pF
pF
µ
A
0.2Min.
1/1
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