71V3556SA150BQ8 datasheet, PDF

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71V3556SA150BQ8: DescriptionSRAM 4M X36 3.3V I/O SLOW ZBT; Categorystorage; File Size502KB，25 Pages; ManufacturerIDT (Integrated Device Technology)

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71V3556SA150BQ8 Overview

SRAM 4M X36 3.3V I/O SLOW ZBT

71V3556SA150BQ8 Parametric

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	IDT (Integrated Device Technology)
Product Category	SRAM
RoHS	N
Memory Size	4 Mbit
Organization	128 k x 36
Maximum Clock Frequency	150 MHz
Interface Type	Parallel
Supply Voltage - Max	3.465 V
Supply Voltage - Min	3.135 V
Minimum Operating Temperature	0 C
Maximum Operating Temperature	+ 70 C
Mounting Style	SMD/SMT
Package / Case	CABGA-165
Packaging	Reel
Height	1.2 mm
Length	15 mm
Memory Type	SDR
Type	Synchronous
Width	13 mm
Moisture Sensitive	Yes
Factory Pack Quantity	2000

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IDT71V3556S/XS

128K x 36, 256K x 18

3.3V Synchronous ZBT SRAMs

IDT71V3558S/XS

3.3V I/O, Burst Counter

IDT71V3556SA/XSA

Pipelined Outputs

IDT71V3558SA/XSA

◆

Features

128K x 36, 256K x 18 memory configurations

Supports high performance system speed - 200 MHz (x18)

(3.2 ns Clock-to-Data Access)

Supports high performance system speed - 166 MHz (x36)

(3.5 ns Clock-to-Data Access)

ZBT

Feature - No dead cycles between write and read

cycles

Internally synchronized output buffer enable eliminates the

need to control

Single R/W (READ/WRITE) control pin

Positive clock-edge triggered address, data, and control

signal registers for fully pipelined applications

4-word burst capability (interleaved or linear)

Individual byte write (BW

) control (May tie active)

Three chip enables for simple depth expansion

3.3V power supply (±5%), 3.3V I/O Supply (V

DDQ)

Optional- Boundary Scan JTAG Interface (IEEE 1149.1

compliant)

Packaged in a JEDEC standard 100-pin plastic thin quad

flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch

ball grid array (fBGA)

Description

The IDT71V3556/58 are 3.3V high-speed 4,718,592-bit (4.5 Mega-

bit) synchronous SRAMS. They are designed to eliminate dead bus

cycles when turning the bus around between reads and writes, or

writes and reads. Thus, they have been given the name ZBT

, or

Zero Bus Turnaround.

Address and control signals are applied to the SRAM during one

clock cycle, and two cycles later the associated data cycle occurs, be

it read or write.

The IDT71V3556/58 contain data I/O, address and control signal

registers. Output enable is the only asynchronous signal and can be

used to disable the outputs at any given time.

A Clock Enable (CEN) pin allows operation of the IDT71V3556/58

to be suspended as long as necessary. All synchronous inputs are

ignored when (CEN) is high and the internal device registers will hold

their previous values.

There are three chip enable pins (CE

, CE

) that allow the

user to deselect the device when desired. If any one of these three are

not asserted when ADV/LD is low, no new memory operation can be

initiated. However, any pending data transfers (reads or writes) will be

completed. The data bus will tri-state two cycles after chip is deselected

or a write is initiated.

Pin Description Summary

-A

, CE

R/W

CEN

CLK

ADV/LD

LBO

TMS

TDI

TCK

TDO

TRST

I/O

-I/O

, I/O

-I/O

, V

DDQ

Address Inputs

Chip Enables

Output Enable

Read/Write Signal

Clock Enable

Individual Byte Write Selects

Clock

Advance burst address / Load new address

Linear / Interleaved Burst Order

Test Mode Select

Test Data Input

Test Clock

Test Data Output

JTAG Reset (Optional)

Sleep Mode

Data Input / Output

Core Power, I/O Power

Ground

Input

Output

Input

I/O

Supply

Synchronous

Asynchronous

Synchronous

N/A

Synchronous

Static

Synchronous

N/A

Synchronous

Asynchronous

Synchronous

Static

5281 tbl 01

JANUARY 2015

DSC-5281/12

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