IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
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Email
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For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BYV29G-600
Ultrafast rectifier diode
Rev. 01 — 4 February 2010
Product data sheet
1. Product profile
1.1 General description
Ultrafast epitaxial rectifier diode in a SOT226 (I2PAK) plastic package
1.2 Features and benefits
Fast switching
High thermal cycling performance
Low forward voltage drop
Low on-state losses
Low profile package facilitating
compact designs
Low thermal resistance
Soft recovery minimizes
power-consuming oscillations
1.3 Applications
Discontinuous Current Mode (DCM)
Power Factor Correction (PFC)
Output rectifiers in high-frequency
switched-mode power supplies
1.4 Quick reference data
Table 1.
V
RRM
I
F(AV)
Quick reference
Conditions
Min
-
square-wave pulse;
δ
= 0.5; T
mb
≤
123 °C;
see
Figure 1
and
2
t
p
= 25 µs;
δ
= 0.5
-
Typ
-
-
Max
600
9
Unit
V
A
repetitive peak reverse
voltage
average forward current
Symbol Parameter
I
FRM
repetitive peak forward
current
reverse recovery time
-
-
18
A
Dynamic characteristics
t
rr
I
F
= 1 A; V
R
= 30 V;
dI
F
/dt = 100 A/µs;
T
j
= 25 °C; see
Figure 5
I
F
= 8 A; T
j
= 150 °C;
see
Figure 4
-
50
60
ns
Static characteristics
V
F
forward voltage
-
0.97
1.11
V
NXP Semiconductors
BYV29G-600
Ultrafast rectifier diode
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol
n.c.
K
A
K
Description
no connection
cathode
anode
mounting base; cathode
1
2
3
003aad550
Simplified outline
Graphic symbol
1
2
3
SOT226A (I2PAK)
3. Ordering information
Table 3.
Ordering information
Package
Name
BYV29G-600
I2PAK
Description
plastic single-ended package (I2PAK); TO-262
Version
SOT226A
Type number
4. Limiting values
Table 4.
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
T
stg
T
j
I
FRM
Limiting values
Parameter
repetitive peak reverse
voltage
crest working reverse
voltage
reverse voltage
average forward
current
non-repetitive peak
forward current
storage temperature
junction temperature
repetitive peak forward
current
t
p
= 25 µs;
δ
= 0.5
DC
square-wave pulse;
δ
= 0.5; T
mb
≤
123 °C; see
Figure 1
and
2
t
p
= 8.3 ms; sine-wave pulse; T
j(init)
= 25 °C
t
p
= 10 ms; sine-wave pulse; T
j(init)
= 25 °C
Conditions
Min
-
-
-
-
-
-
-40
-
-
Max
600
600
600
9
77
70
150
150
18
Unit
V
V
V
A
A
A
°C
°C
A
In accordance with the Absolute Maximum Rating System (IEC 60134).
BYV29G-600_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2010
2 of 11
NXP Semiconductors
BYV29G-600
Ultrafast rectifier diode
20
P
tot
(W)
15
0.5
10
0.1
003aab480
12
P
tot
(W)
10
2.2
8
4.0
2.8
1.9
003aab481
a = 1.57
δ
=1
0.2
6
4
5
2
0
0
5
10
I
F(AV)
(A)
15
0
0
3
6
I
F(AV)
(A)
9
Fig 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
BYV29G-600_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2010
3 of 11
NXP Semiconductors
BYV29G-600
Ultrafast rectifier diode
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction
to mounting base
thermal resistance from junction
to ambient free air
Conditions
with heatsink compound; see
Figure 3
Min
-
-
Typ
-
60
Max
2.5
-
Unit
K/W
K/W
10
Z
th(j-mb)
(K/W)
1
001aag913
10
−1
P
δ
=
t
p
T
10
−2
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
t
p
(s)
Fig 3.
Transient thermal impedance from junction to mounting base as a function of pulse width
BYV29G-600_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2010
4 of 11
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