DMN32D2LV
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Dual N-Channel MOSFET
Low On-Resistance
Very Low Gate Threshold Voltage, 1.2V max
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SOT563
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (Approximate)
SOT563
D
2
G
1
S
1
S
2
G
2
D
1
E D P O CTE
S R TE
D
Top View
Top View
Schematic and Transistor Diagram
Ordering Information
(Note 4)
Part Number
DMN32D2LV-7
Notes:
Case
SOT563
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
SOT563
D
2
G
1
S
1
DV YM
S
2
G
2
D
1
DV = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: U = 2007)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2007
U
Jan
1
---
---
Feb
2
Mar
3
2014
B
Apr
4
2015
C
May
5
2016
D
Jun
6
2017
E
Jul
7
2018
F
Aug
8
Sep
9
2019
G
Oct
O
2020
H
Nov
N
2021
I
Dec
D
DMN32D2LV
Document number: DS31121 Rev. 10 - 2
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December 2015
© Diodes Incorporated
DMN32D2LV
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Symbol
V
DSS
V
GSS
I
D
Value
30
10
400
Unit
V
V
mA
Thermal Characteristics
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
P
D
R
θJA
T
J
, T
STG
450
313
-55 to +150
mW
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
GSS
I
GSS
V
GS(TH)
R
DS(ON)
|Y
FS
|
V
SD
C
ISS
C
OSS
C
RSS
t
ON
t
OFF
Min
30
0.6
100
0.5
Typ
1
8
15
39
10
3.6
11
51
Max
1
10
500
100
100
100
1.2
2.2
1.5
1.2
1.4
Unit
V
μA
μA
nA
nA
nA
nA
V
Ω
mS
V
pF
pF
pF
ns
ns
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 30V, V
GS
= 0V
V
GS
= ±10V, V
DS
= 0V
V
GS
= ±5V, V
DS
= 0V
V
GS
= ±2.5V, V
DS
= 0V
V
GS
= ±2.5V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 1.8V, I
D
= 20mA
V
GS
= 2.5V, I
D
= 20mA
V
GS
= 4.0V, I
D
= 100mA
V
DS
=10V, I
D
= 0.1A
V
GS
= 0V, I
S
= 115mA
V
DS
= 3V, V
GS
= 0V
f = 1.0MHz
V
DD
= 5V, I
D
= 10 mA,
V
GS
= 5V
Characteristic
OFF CHARACTERISTICS
(Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Body Leakage (Note 7)
ON CHARACTERISTICS
(Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Time
Notes:
@T
J
= +25°C
@T
J
= +25°C
@T
J
= +105°C
@T
J
= +125°C
Turn-On Time
Turn-Off Time
5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found at http://www.diodes.com/datasheets/ap02001.pdf.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
DMN32D2LV
Document number: DS31121 Rev. 10 - 2
2 of 6
www.diodes.com
December 2015
© Diodes Incorporated
DMN32D2LV
DMN32D2LV
Document number: DS31121 Rev. 10 - 2
3 of 6
www.diodes.com
December 2015
© Diodes Incorporated
DMN32D2LV
1.8
1.6
V
GS
= 4V
I
D
= 100mA
V
GS
= 2.5V
I
D
= 20mA
V
GS
= 1.8V
I
D
= 20mA
R
DS(ON)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.4
1.2
1.0
0.8
0.6
-75
-50 -25
0
25 50 75 100 125 150
T
A
, AMBIENT TEMPERATURE (C°)
Fig. 7 Normalized Static Drain-Source On-Resistance
vs. Ambient Temperature
50
f = 1 MHz
40
C
iss
C
T
, CAPACITANCE (pF)
30
20
10
C
oss
C
rss
0
0
5
10
15
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Capacitance
20
10000
10000
I
GSS
, LEAKAGE CURRENT (nA)
1000
T
A
= 125°C
I
GSS
, LEAKAGE CURRENT (nA)
1000
T
A
= 125°C
100
T
A
= 105°C
100
T
A
= 105°C
10
T
A
= 25°C
10
T
A
= 25°C
1
1
0.1
0
2
4
6
8
10
12
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig.11 Gate-Source Leakage Current vs Voltage
0.1
0
2
4
6
8
10
12
V
GS
, GATE-SOURCE VOLTAGE (-V)
Fig.12 Gate-Source Leakage Current vs Voltage
DMN32D2LV
Document number: DS31121 Rev. 10 - 2
4 of 6
www.diodes.com
December 2015
© Diodes Incorporated
DMN32D2LV
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
SOT563
A
B
C
D
G
K
M
SOT-563
Dim Min
Max Typ
A
0.15 0.30 0.20
B
1.10 1.25 1.20
C
1.55 1.70 1.60
D
—
—
0.50
G
0.90 1.10 1.00
H
1.50 1.70 1.60
K
0.55 0.60 0.60
L
0.10 0.30 0.20
M
0.10 0.18 0.11
All Dimensions in mm
H
L
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT563
C2
C2
Z
G
C1
Dimensions Value (in mm)
Z
2.2
G
1.2
X
0.375
Y
0.5
C1
1.7
C2
0.5
Y
X
DMN32D2LV
Document number: DS31121 Rev. 10 - 2
5 of 6
www.diodes.com
December 2015
© Diodes Incorporated
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