NJG1131HA8
UHF BAND LOW NOISE AMPLIFIER GaAs MMIC
IGENERAL
DESCRIPTION
NJG1131HA8 is a low noise amplifier GaAs MMIC designed for
mobile digital TV application (470~770 MHz).
This IC features good gain flatness, and low gain characteristic
in out-of-band. This IC achieves low current consumption, low
noise figure and low distortion. Also, this IC is integrated the
ESD protection circuit.
An ultra-small and ultra-thin package of USB6-A8 is adopted.
IAPPLICATIONS
Wide band application from 470MHz to 770MHz
Mobile TV and Digital TV applications
Mobile phone and tablet PC applications
IFEATURES
G
Wide operating frequency range
G
Low voltage operation
G
Low current consumption
G
Gain
G
Low noise figure
G
High P-1dB(IN)
G
High Input IP3
G
Ultra-small & ultra-thin package
470~770MHz
+2.7V typ.
3.4mA typ.
10.0dB typ.
1.4dB typ.
-5.0dBm typ.
+5.0dBm typ.
USB6-A8 (Package size: 1mm x 1.2mm x 0.38mm typ.)
IPACKAGE
OUTLINE
NJG1131HA8
I
PIN CONFIGURATION
(Top View)
GND
VG
6
RFOUT
1
Bias
Circuit
1 Pin INDEX
5
Pin Connection
1. GND
2. RFIN
3. GND
4. GND
5. RFOUT
6. VG
2
RFIN
GND
4
3
GND
Note: Specifications and description listed in this catalog are subject to change without notice.
Ver.2013-04-23
-1-
NJG1131HA8
I
ABSOLUTE MAXIMUM RATINGS
T
a
=+25°C, Z
s
=Z
l
=50 ohm
PARAMETER
Drain Voltage
Input power
Power dissipation
Operating temperature
Storage temperature
SYMBOL
V
DD
P
IN
P
D
T
opr
T
stg
CONDITIONS
VDD terminal
V
DD
=2.7V
On PCB board, Tjmax=150°C
RATINGS
5
+15
150
-40~+85
-55~+150
UNITS
V
dBm
mW
°C
°C
I
ELECTRICAL CHARACTERISTICS 1
(DC)
General conditions: V
DD
=2.7V, T
a
=+25°C, Z
s
=Z
l
=50 ohm, with application circuit.
PARAMETERS
Operating voltage
Operating Current
SYMBOL
V
DD
I
DD
RF OFF
CONDITIONS
MIN
2.3
-
TYP
2.7
3.4
MAX
3.6
5.0
UNITS
V
mA
I
ELECTRICAL CHARACTERISTICS 2
(RF)
General conditions: V
DD
= 2.7V, f
RF
=470~770MHz, T
a
=+25°C, Z
s
=Z
l
=50 ohm, with application circuit.
PARAMETERS
Operating Frequency
Small signal gain
Gain flatness
Noise figure
Input power at 1dB gain
compression point
Input 3rd order
intercept point
RF IN VSWR
RF OUT VSWR
SYMBOL
f
RF
Gain
G
flat
NF
P
-1dB(IN)
IIP3
VSWRi
VSWRo
f1=f
RF
, f2=f
RF
+100kHz,
Pin=-28dBm
Exclude PCB & connector
losses (0.05dB)
CONDITIONS
MIN
470
8.0
-
-
-8.0
+2.0
-
-
TYP
620
10.0
1.1
1.4
-5.0
+5.0
2.6
2.9
MAX
770
12.0
1.4
1.8
-
-
3.0
3.3
UNITS
MHz
dB
dB
dB
dBm
dBm
-2-
NJG1131HA8
ITERMINAL
INFORMATION
No.
1
2
3
4
SYMBOL
GND
RFIN
GND
GND
Ground terminal.
RF input terminal. This terminal requires the DC-blocking capacitor and the
DC-feed Inductor as shown in the application circuit.
Ground terminal.
Ground terminal.
RF output terminal. This terminal requires the external matching circuit as
shown in the application circuit.
Power supply pin of the bias circuit. Please supply the voltage as same as the
LNA voltage.
DESCRIPTION
5
RFOUT
6
VG
CAUTION
1) Ground terminals (1pin, 3pin and 4pin) should be connected with the ground plane close as possible.
-3-
NJG1131HA8
I
ELECTRICAL CHARACTERISTICS
(Conditions:
T
a
=+25°C, VDD=2.7V, Z
s
=Z
l
=50 ohm, with application circuit.)
Pout vs. Pin
(fRF=620MHz)
10
5
0
-5
Pout (dBm)
Gain, IDD vs. Pin
(fRF=620MHz)
12
11
Gain
10
Gain (dB)
9
8
7
6
5
IDD
6
IDD (mA)
NF (dB)
8
7
5
4
3
2
1
P-1dB(IN)=-3.4dBm
0
-40
-35
-30
-25
-20
-15
-10
-5
0
Pin (dBm)
-10
Pout
-15
-20
-25
-30
P-1dB(IN)=-3.4dBm
-35
-40
-35
-30
-25
-20
Pin (dBm)
-15
-10
-5
0
4
Pout, IM3 vs. Pin
(f1=620MHz, f2=620.1MHz)
20
0
-20
-40
-60
-80
IM3
-100
-40
-30
-20
-10
IIP3=+7.6dBm
0
10
Pout
Gain, NF vs. Frequency
12
11
Gain
10
Gain (dB)
9
8
7
NF
6
5
4
400
450
500
550
600
650
700
750
Frequency (MHz)
1
0.5
0
800
3
2.5
2
1.5
4
3.5
Pout, IM3 (dBm)
Pin (dBm)
P-1dB(IN) vs. Frequency
5
20
IIP3, OIP3 vs. Frequency
(f1=Frequency, f2=Frequency+0.1MHz, Pin=-28dBm)
OIP3
0
P-1dB(IN) (dBm)
P-1dB(IN)
-5
IIP3, OIP3 (dBm)
15
10
IIP3
5
-10
-15
400
450
500
550
600
650
Frequency (MHz)
700
750
800
0
400
450
500
550
600
650
700
750
800
Frequency (MHz)
-4-
NJG1131HA8
I
ELECTRICAL CHARACTERISTICS
(Conditions:
T
a
=+25°C, VDD=2.7V, Z
s
=Z
l
=50 ohm, with application circuit.)
K-factor vs. Frequency
30
Gain, NF vs. VDD
(fRF=620MHz)
12
10
Gain
8
Gain (dB)
6
4
NF
2
0
6
5
4
3
2
1
0
0
1
2
3
VDD (V)
4
5
NF (dB)
25
20
K-factor
15
10
5
0
0
5000
10000
15000
20000
Frequency (MHz)
P-1dB(IN) vs. VDD
(fRF=620MHz)
5
25
20
IIP3, OIP3 vs. VDD
(f1=620MHz, f2=620.1MHz, Pin=-28dBm)
0
P-1dB(IN) (dBm)
IIP3, OIP3 (dBm)
15
OIP3
10
5
IIP3
0
-5
P-1dB(IN)
-5
-10
-15
0
1
2
VDD (V)
3
4
5
0
1
2
VDD (V)
3
4
5
IDD vs. VDD
(RF OFF)
7
6
VSWRi(max.), VSWRo(max.)
5
IDD (mA)
4
3
IDD
2
1
0
0
1
2
VDD (V)
3
4
5
8
7
6
5
4
VSWR vs. VDD
(fRF=470~770MHz)
VSWRo(max.)
3
2
1
0
0
1
2
VDD (V)
3
4
5
VSWRi(max.)
-5-
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