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DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D102
BAT854W series
Schottky barrier (double) diodes
Product data sheet
2001 Feb 27
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
FEATURES
•
Very low forward voltage
•
Very low reverse current
•
Guard ring protected
•
Very small SMD plastic package.
APPLICATIONS
•
Ultra high-speed switching
•
Voltage clamping
•
Protection circuits
•
Blocking diodes
•
Low power consumption
applications (e.g. hand-held
applications).
DESCRIPTION
Planar Schottky barrier diodes
encapsulated in a SOT323 very small
SMD plastic package. Single diodes
and double diodes with different
pinning are available.
MARKING
PINNING
PIN
BAT854W
1
2
3
BAT854AW
1
2
3
BAT854CW
1
2
3
BAT854SW
1
2
3
a
1
k
2
k
1
, a
2
a
1
a
2
k
1
, k
2
Fig.3
k
1
k
2
a
1
,a
2
a
n.c.
k
Fig.2
SYMBOL
BAT854W series
3
1
2
n.c.
MLC357
BAT854W single diode
configuration (symbol).
3
1
2
MLC360
BAT854AW diode
configuration (symbol).
3
1
2
MLC359
TYPE NUMBER
BAT854W
BAT854AW
BAT854CW
BAT854SW
MARKING
CODE
81
82
83
84
handbook, 2 columns
3
Fig.4
BAT854CW diode
configuration (symbol).
1
Top view
2
MBC870
3
1
2
MLC358
Fig.1
Simplified outline
SOT323 and pin
configuration.
Fig.5
BAT854SW diode
configuration (symbol).
2001 Feb 27
2
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
T
amb
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
t
p
≤
1 s;
δ ≤
0.5
t = 8.3 ms half sinewave;
JEDEC method
−
−
−
−
−65
−
−65
PARAMETER
CONDITIONS
BAT854W series
MIN.
MAX.
UNIT
40
200
300
1
+150
150
+150
V
mA
mA
A
°C
°C
°C
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C;
unless otherwise specified.
SYMBOL
Per diode
V
F
continuous forward voltage
see Fig.6
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
I
R
C
d
Note
1. Pulse test: t
p
= 300
μs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOT323 standard mounting conditions.
PARAMETER
CONDITIONS
VALUE
625
UNIT
K/W
continuous reverse current
diode capacitance
V
R
= 25 V; note 1; see Fig.7
V
R
= 1 V; f = 1 MHz; see Fig.8
200
260
340
−
−
−
−
−
−
−
420
550
0.5
20
mV
mV
mV
mV
mV
μA
pF
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
thermal resistance from junction to ambient note 1
2001 Feb 27
3
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
GRAPHICAL DATA
10
3
MLD546
BAT854W series
handbook, halfpage
handbook, halfpage
10
3
MLD547
IF
(mA)
10
2
IR
(μA)
10
2
(1)
(2)
10
10
(1)
(2)
(3)
1
1
(3)
10
−1
0
0.4
0.8
VF (V)
1.2
10
−1
0
10
20
30
VR (V)
40
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
Fig.6
Forward current as a function of forward
voltage; typical values.
Fig.7
Reverse current as a function of reverse
voltage; typical values.
handbook, halfpage
20
Cd
16
MLD548
(pF)
12
8
4
0
0
10
20
30
VR (V)
40
f = 1 MHz; T
amb
= 25
°C.
Fig.8
Diode capacitance as a function of reverse
voltage; typical values.
2001 Feb 27
4
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