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CD13005E

Description
NPN SILICON POWER TRANSISTOR
File Size151KB,4 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
Download Datasheet Compare View All

CD13005E Overview

NPN SILICON POWER TRANSISTOR

Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON POWER TRANSISTOR
CD13005
TO-220
Plastic Package
Applications
Suitable for Lighting, Switching Regulator and Motor Control
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter (sus) Voltage
Emitter Base Voltage
Collector Current Continuous
Peak (1)
Base Current Continuous
Peak (1)
Emitter Current Continuous
Peak (1)
Power Dissipation @ T
a
=25 ºC
Derate Above 25ºC
Power Dissipation @ T
c
=25 ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering
Purpose: 1/8" from Case for 5 Seconds
(1) Pulse Test: Pulse Width=5ms, Duty Cycle=10%
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise)
DESCRIPTION
Collector Base Voltage
Collector Emitter (sus) Voltage
Collector Cut Off Current
Emitter Cut Off Current
*Pulse Test:- PW=300µs, Duty Cycle=2%
µ
CD13005Rev_3 260404E
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
I
E
I
EM
P
D
P
D
T
j,
T
stg
VALUE
600
400
9.0
2.0
4.0
0.75
1.5
2.25
4.5
1.4
11.2
60
480
- 65 to+150
UNIT
V
V
V
A
A
A
A
A
A
W
mW/ ºC
W
mW/ ºC
ºC
R
th (j-c)
R
th (j-a)
T
L
2.08
89
275
ºC/W
ºC/W
ºC
SYMBOL
V
CBO
*V
CEO(sus)
I
CBO
I
EBO
TEST CONDITION
I
C
=1mA, I
E
=0
I
C
=10mA, I
B
=0
V
CB
=600V
,
I
E
=0
V
CB
=600V
,
I
E
=0, T
c
=100ºC
V
EB
=9V, I
C
=0
MIN
600
400
-
-
TYP
-
-
-
-
MAX
-
-
1.0
5.0
1.0
UNIT
V
V
mA
mA
mA
Continental Device India Limited
Data Sheet
Page 1 of 4

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