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PD55015TR-E

Description
RF MOSFET Transistors N-Ch, 12.5V 15W3 Transistor, LDMOST
CategoryDiscrete semiconductor    The transistor   
File Size469KB,25 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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PD55015TR-E Overview

RF MOSFET Transistors N-Ch, 12.5V 15W3 Transistor, LDMOST

PD55015TR-E Parametric

Parameter NameAttribute value
Brand NameSTMicroelectronics
MakerSTMicroelectronics
Parts packaging codeSOT
package instructionROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN
Contacts10
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time25 weeks
Other featuresHIGH RELIABILITY
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage40 V
Maximum drain current (Abs) (ID)7 A
Maximum drain current (ID)7 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G2
JESD-609 codee3
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature165 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)250
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)79 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
PD55015-E
RF power transistor from the LdmoST plastic family
of N-channel enhancement-mode lateral MOSFETs
Features
Excellent thermal stability
Common source configuration
P
OUT
=15 W with 14dB gain @ 500 MHz/12.5 V
PowerSO-10RF
(formed lead)
Description
The PD55015-E is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 12 V in common source mode at
frequencies of up to 1 GHz. The PD55015-E
boasts the excellent gain, linearity and reliability
thanks to ST’s latest LDMOS technology mounted
in the first true SMD plastic RF power package,
the PowerSO-10RF.
The PD55015-E’s superior linearity performance
makes it an ideal solution for car mobile radios.
The PowerSO-10RF plastic package is designed
for high reliability, and is the first JEDEC-
approved, high power SMD package from ST. It
has been optimized for RF requirements and
offers excellent RF performance and ease of
assembly.
Mounting recommendations are provided in
application note AN1294, available on
www.st.com.
PowerSO-10RF
(straight lead)
Figure 1.
Pin connection
Source
Gate
Drain
Table 1.
Device summary
Order code
PD55015-E
PD55015S-E
PD55015TR-E
PD55015STR-E
Package
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
Packing
Tube
Tube
Tape and reel
Tape and reel
August 2011
Doc ID 12596 Rev 3
1/25
www.st.com
25

PD55015TR-E Related Products

PD55015TR-E PD55015STR-E PD55015-E
Description RF MOSFET Transistors N-Ch, 12.5V 15W3 Transistor, LDMOST RF MOSFET Transistors POWER R.F. Trans RF FET N-CH 40V 5A 3-Pin PowerSO-10RF (Formed lead) Tube
Brand Name STMicroelectronics STMicroelectronics STMicroelectronics
Maker STMicroelectronics STMicroelectronics STMicroelectronics
Parts packaging code SOT SOT SOT
package instruction ROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN ROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN ROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN
Contacts 10 10 10
Reach Compliance Code not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99
Factory Lead Time 25 weeks 25 weeks 25 weeks
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Shell connection SOURCE SOURCE SOURCE
Configuration SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 40 V 40 V 40 V
Maximum drain current (Abs) (ID) 7 A 7 A 5 A
Maximum drain current (ID) 7 A 7 A 5 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G2 R-PDSO-F2 R-PDSO-G2
JESD-609 code e3 e3 e3
Number of components 1 1 1
Number of terminals 2 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 165 °C 165 °C 165 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 250 250 250
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 79 W 79 W 73 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface MATTE TIN Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed
Terminal form GULL WING FLAT GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 30 30 30
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Humidity sensitivity level - 3 3
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