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DMB53D0UDW-7

Description
MOSFET N-CHANNEL NPN ENHANCEMENT MODE
CategoryDiscrete semiconductor    The transistor   
File Size125KB,7 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
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DMB53D0UDW-7 Overview

MOSFET N-CHANNEL NPN ENHANCEMENT MODE

DMB53D0UDW-7 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerDiodes Incorporated
package instructionGREEN, ULTRA SMALL, PLASTIC PACKAGE-6
Contacts6
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time18 weeks
Other featuresHIGH RELIABILITY
Maximum collector current (IC)0.1 A
ConfigurationSINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE
Minimum DC current gain (hFE)200
Minimum drain-source breakdown voltage50 V
Maximum drain current (ID)0.16 A
Maximum drain-source on-resistance4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
VCEsat-Max0.3 V
DMB53D0UDW
N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR
Please click here to visit our online spice models database.
Features
N-Channel MOSFET and NPN Transistor in One Package
Low On-Resistance
Very Low Gate Threshold Voltage, 1.0V max
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead, Halogen and Antimony Free, RoHS Compliant (Note
2
)
ESD Protected MOSFET Gate up to 2kV
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42 Lead frame.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 5
Ordering Information: See Page 5
Weight: 0.006 grams (approximate)
SOT-363
D
2
Q
1
B
E
Q
2
S
2
ESD protected gate up to 2kV
TOP VIEW
G
2
TOP VIEW
C
Internal Schematic
Maximum Ratings – MOSFET, Q1
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 1)
@T
A
= 25°C unless otherwise specified
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
50
±12
160
560
Units
V
V
mA
mA
Continuous
Maximum Ratings - NPN Transistor, Q2
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
50
45
6.0
100
Unit
V
V
V
mA
Thermal Characteristics, Total Device
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
@T
A
= 25°C unless otherwise specified
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
250
500
-55 to +150
Unit
mW
°C/W
°C
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMB53D0UDW
Document number: DS31675 Rev. 5 - 2
1 of 7
www.diodes.com
December 2009
© Diodes Incorporated
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